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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Correlations between atomic structure and giant magnetoresistance ratio in Co_2(Fe,Mn)Si spin valves
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Correlations between atomic structure and giant magnetoresistance ratio in Co_2(Fe,Mn)Si spin valves

机译：Co_2（Fe，Mn）Si自旋阀的原子结构与巨磁阻比的相关性

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摘要

We show that the magnetoresistance of Co_2Fe_xMn_(1-x)Si-based spin valves, over 70% at low temperature, is directly related to the structural ordering in the electrodes and at the electrodes/spacer (Co_2Fe_xMn_(1-x)Si/Ag) interfaces. Aberration-corrected atomic resolution Z-contrast scanning transmission electron microscopy of device structures reveals that annealing at 350 °C and 500 °C creates partial B2/L2_1 and fully L2_1 ordering of electrodes, respectively. Interface structural studies show that the Ag/Co_2Fe_xMn_(1-x)Si interface is more ordered compared to the Co_2Fe_xMn_(1-x)Si/Ag interface. The release of interface strain is mediated by misfit dislocations that localize the strain around the dislocation cores, and the effect of this strain is assessed by first principles electronic structure calculations. This study suggests that by improving the atomic ordering and strain at the interfaces, further enhancement of the magnetoresistance of CFMS-based current-perpendicular-to-plane spin valves is possible.
机译：我们表明，基于Co_2Fe_xMn_（1-x）Si的自旋阀在低温下超过70％的磁阻与电极和电极/间隔层中的结构有序直接相关（Co_2Fe_xMn_（1-x）Si / Ag）接口。器件结构的像差校正原子分辨率Z对比扫描透射电子显微镜显示，在350°C和500°C的退火温度分别形成了电极的部分B2 / L2_1和完全L2_1有序。界面结构研究表明，与Co_2Fe_xMn_（1-x）Si / Ag界面相比，Ag / Co_2Fe_xMn_（1-x）Si界面更有序。界面应变的释放是由错配位错介导的，该错配位错将应变定位在位错核心周围，并且通过第一原理电子结构计算来评估该应变的影响。这项研究表明，通过改善界面处的原子有序性和应变，可以进一步增强基于CFMS的电流垂直于平面自旋阀的磁阻。

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