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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Diameter-dependent morphology of vapour-solid-solid grown ZnSe nanowires
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Diameter-dependent morphology of vapour-solid-solid grown ZnSe nanowires

机译:气固固生长的ZnSe纳米线的直径依赖性形态

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We report on the growth of ZnSe nanowires by molecular beam epitaxy using solid Au nanoparticles as growth seeds. We show that nanowires with diameter below 15 nm are reproducibly straight, while thicker nanowires display a 'worm-like' morphology characterized by multiple kinks. This size-dependent morphology does not depend on growth parameters such as substrate temperature, Zn/Se pressure ratio or substrate chemistry, but we believe it is related to the solid state of the metal seed driving the nanowire growth. We finally propose three alternative methods to selectively obtain thin, straight and oriented ZnSe nanowires on GaAs(1 1 1)B.
机译:我们报告了使用固体金纳米颗粒作为生长种子通过分子束外延生长ZnSe纳米线。我们显示,直径小于15 nm的纳米线可再现地笔直,而较粗的纳米线则表现出以多种扭结为特征的“蠕虫状”形态。这种与尺寸有关的形态不取决于生长参数,例如衬底温度,Zn / Se压力比或衬底化学性质,但我们认为它与驱动纳米线生长的金属种子的固态有关。我们最终提出了三种替代方法,以在GaAs(1 1 1)B上有选择地获得细的,笔直的和定向的ZnSe纳米线。

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