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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Adsorption and reactivity of nitrogen atoms on silica surface under plasma exposure
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Adsorption and reactivity of nitrogen atoms on silica surface under plasma exposure

机译：等离子体暴露下二氧化硅表面上氮原子的吸附和反应活性

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摘要

The kinetics of adsorption, desorption and recombination of nitrogen atoms on a silica surface is investigated. Stable nitrogen atoms are grafted to the inner surface of a fused silica discharge tube by a discharge in N-2 at 0.53 mbar. After the pre-treatment, the surface is analysed using x-ray photoelectron spectroscopy and an isotopic exchange technique. The latter consists of the exposure of the pre-treated surface with a discharge in the heavy nitrogen isotope N-30(2). Nitrogen isotopologues N-29(2) and N-28(2) produced on the surface are detected using a mass spectrometer and provide information about the coverage and reactivity of adsorbed N-14 atoms. It is found that during the pre-treatment, a silicon oxynitride (SiOxNy) layer is formed on the initially clean SiO2 surface. The coverage of N on the surface increases from 5 x 10(13) to 5 x 10(15) cm(-2) for a pre-treatment duration in the range of 10(-2) - 10(4) s. Atoms on the surface demonstrate a distribution of reactivity, which is attributed to a distribution of their binding energies and configurations on the surface. We demonstrate that stable chemisorbed N-ads are not the main recombination sites for N atoms on the surface contrary to previous studies. We conclude that recombination takes place mainly on weakly bonding active sites with the binding energy smaller than 1 eV.
机译：研究了氮在二氧化硅表面上的吸附，解吸和重组的动力学。通过在N-2中以0.53毫巴的放电将稳定的氮原子接枝到熔融石英放电管的内表面。预处理后，使用X射线光电子能谱和同位素交换技术分析表面。后者包括预处理表面暴露于重氮同位素N-30（2）中的放电。使用质谱仪检测表面上产生的氮同位素N-29（2）和N-28（2），并提供有关吸附的N-14原子的覆盖率和反应性的信息。发现在预处理期间，在最初清洁的SiO 2表面上形成氮氧化硅（SiO x N y）层。在10（-2）-10（4）s范围内的预处理期间，表面上N的覆盖范围从5 x 10（13）cm增加到5 x 10（15）cm（-2）。表面上的原子显示出反应性的分布，这归因于它们在表面上的结合能和构型的分布。我们证明，与以前的研究相反，稳定的化学吸附N-ads不是表面上N原子的主要重组位点。我们得出结论，重组主要发生在结合能小于1 eV的弱结合活性位点上。

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