Colour and multicolour tuning of InGaN quantum dot based light-emitting diodes

C Tessarek; S Figge; D Hommel

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Colour and multicolour tuning of InGaN quantum dot based light-emitting diodes

机译：InGaN量子点基发光二极管的颜色和多色调整

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InGaN quantum dots (QDs) formed via spinodal and binodal decomposition are used as an optically active region for light-emitting diodes (LEDs). It is shown that the emission wavelength of the electroluminescence (EL) can be shifted from blue to green by adjusting the deposition time of the InGaN QD layer. A first approach towards a monolithic multicolour emitting diode is presented. Strong difference of the EL on the InGaN QD stacking sequence is observed and is attributed to both low hole concentration and mobility.

机译：通过旋节线和双节线分解形成的InGaN量子点（QD）用作发光二极管（LED）的光学有源区。结果表明，通过调节InGaN QD层的沉积时间，可以将电致发光（EL）的发射波长从蓝色变为绿色。提出了一种用于单片多色发光二极管的第一种方法。观察到在InGaN QD堆叠序列上EL的强烈差异，这归因于低空穴浓度和迁移率。

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《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2014年第5期|共6页
作者
C Tessarek; S Figge; D Hommel;
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正文语种 eng
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关键词
InGaN; quantum dots; spinodal and binodal decomposition; MOVPE; LED;

机译：氮化铟镓;量子点;螺线和双轴分解;MOVPE;LED;

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1. Colour and multicolour tuning of InGaN quantum dot based light-emitting diodes [J] . C Tessarek, S Figge, D Hommel Journal of Physics, D. Applied Physics: A Europhysics Journal . 2014,第5期

机译：InGaN量子点基发光二极管的颜色和多色调整
2. Growth and characterization of phosphor-free white light-emitting diodes based on InGaN blue quantum wells and green-yellow quantum dots [J] . Di Yang, Lai Wang, Wen-Bin Lv, Superlattices and microstructures . 2015,第JUNa期

机译：基于InGaN蓝色量子阱和绿黄色量子点的无荧光粉白色发光二极管的生长和表征
3. Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes [J] . Barettin Daniele, Maur Matthias Auf Der, di Carlo Aldo, Nanotechnology . 2017,第27期

机译：IngaN量子点基发光二极管的载波传输和发射效率
4. Phosphor-Free White Light-Emitting Diodes Based on InGaN Blue Quantum Wells and Green-Yellow Quantum Dots [C] . Yang Di, Wang Lai, Lv Wen-Bin, IEEE International Semiconductor Laser Conference . 2014

机译：基于InGaN蓝色量子阱和绿黄色量子点的无磷白光发光二极管
5. InGaN/GaN Multiple Quantum Well Light-Emitting Diodes grown on Polar, Semi-polar and Non-Polar Orientations. [D] . Mukund, Aadhithya Hosalli. 2014

机译：以极性，半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
6. Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots [O] . Hongjian Li, Panpan Li, Junjie Kang, -1

机译：自组装InGaN量子点的宽带全色单片InGaN发光二极管
7. Red Light-Emitting Diode Based on Blue InGaN Chip with CdTeS Quantum Dots [O] . 2017

机译：基于具有CdTeS量子点的蓝色InGaN芯片的红色发光二极管
8. Stable and Efficient Quantum-Dot Light-Emitting Diodes Based on Solution-Processed Multilayer Structures. [R] . Qian, L., Zheng, Y., Xue, J., 2011

机译：基于溶液处理多层结构的稳定高效量子点发光二极管。

Colour and multicolour tuning of InGaN quantum dot based light-emitting diodes

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