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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >MgO magnetic tunnel junctions of enduring F-type upon annealing
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MgO magnetic tunnel junctions of enduring F-type upon annealing

机译：退火后持久F型的MgO磁性隧道结

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The authors performed magnetotransport experiments to determine whether annealing alters the oxygen vacancy-mediated tunnelling potential landscape of the central portion of a MgO ultrathin film within sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions. Using the Irel method reveals a temperature-dependent tunnelling barrier height for a non-annealed barrier that arises from single oxygen vacancies (F centres) and is qualitatively identical to that found for its partly and fully annealed counterparts. Thus these MTJs with F centres remain of F-type upon annealing. This explicitly confirms that the large tunnel-magnetoresistance (TMR) increase upon annealing results mainly from structural modifications of MgO and CoFeB and not from vacancy pairing within the barrier. Photoluminescence spectra performed on both annealed and non-annealed thin MgO films grown on CoFeB electrodes support this conclusion. This work should promote renewed scrutiny over the precise impact of annealing on tunnelling magnetotransport across MgO.
机译：作者进行了磁传输实验，以确定退火是否改变了溅射的CoFeB / MgO / CoFeB磁性隧道结内MgO超薄膜中央部分的氧空位介导的隧穿势能。使用Irel方法可以发现非退火势垒的温度依赖性隧穿势垒高度，该势垒是由单个氧空位（F中心）引起的，并且在质量上与部分退火和完全退火的势垒相同。因此，这些具有F中心的MTJ在退火后仍为F型。这明确证实，退火时大的隧道磁阻（TMR）增加主要来自MgO和CoFeB的结构修饰，而不是由于势垒内的空位配对。在CoFeB电极上生长的退火和未退火MgO薄膜上进行的光致发光光谱均支持这一结论。这项工作应促使人们对退火对跨MgO的隧道磁传输的精确影响进行重新审查。

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