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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Ferroelectric memristive effect in BaTiO_3 epitaxial thin films
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Ferroelectric memristive effect in BaTiO_3 epitaxial thin films

机译：BaTiO_3外延薄膜中的铁电忆阻效应

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摘要

Epitaxial BaTiO_3 (BTO) films have been grown on Nb-doped SrTiO_3 (NSTO) (0 0 1) substrate. The ferroelectric resistive switching effect and memristive behaviours have been observed in Pt/BTO/NSTO heterostructures. It exhibits two resistance states under different polarization, and both current-voltage curves are nonlinear, slightly asymmetric and free of discontinuities, in contrast with what often occurs with other resistive switching devices. In addition, the resistance can be continuously tuned up to 1.3 × 10~5% by varying pulse voltage amplitudes for the ferroelectric memristor application. Moreover, the device exhibits excellent retention and reproducibility. The above phenomena can be qualitatively explained by considering the modulation of the width and height of the potential barrier at the BTO/NSTO interface by ferroelectric polarization.
机译：外延BaTiO_3（BTO）膜已在掺Nb的SrTiO_3（NSTO）（0 0 1）衬底上生长。在Pt / BTO / NSTO异质结构中已经观察到铁电电阻切换效应和忆阻行为。与其他电阻式开关设备经常发生的情况相反，它在不同的极化状态下表现出两种电阻状态，并且两条电流-电压曲线都是非线性的，略微不对称的并且没有间断。此外，通过改变脉冲电压幅值，可将铁电忆阻器的电阻连续调节至1.3×10〜5％。而且，该装置表现出优异的保留性和再现性。通过考虑铁电极化对BTO / NSTO界面处势垒宽度和高度的调制，可以定性地解释上述现象。

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