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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Electrical and band structural analyses of Ti1-xAlxOy films grown by atomic layer deposition on p-type GaAs
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Electrical and band structural analyses of Ti1-xAlxOy films grown by atomic layer deposition on p-type GaAs

机译：在p型GaAs上通过原子层沉积生长的Ti1-xAlxOy薄膜的电学和能带结构分析

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摘要

Amorphous Ti1-xAlxOy films in the Ti-oxide-rich regime (x < 0.5) were deposited on p-type GaAs via atomic layer deposition with titanium isopropoxide, trimethylaluminum, and H2O precursor chemistry. The electrical properties and energy band alignments were examined for the resulting materials with their underlying substrates, and significant frequency dispersion was observed in the accumulation region of the Ti-oxide-rich Ti1-xAlxOy films. Although a further reduction in the frequency dispersion and leakage current (under gate electron injection) could be somewhat achieved through a greater addition of Al-oxide in the Ti1-xAlxOy film, the simultaneous decrease in the dielectric constant proved problematic in finding an optimal composition for application as a gate dielectric on GaAs. The spectroscopic band alignment measurements of the Ti-oxide-rich Ti1-xAlxOy films indicated that the band gaps had a rather slow increase with the addition of Al-oxide, which was primarily compensated for by an increase in the valance band offset, while a nearly-constant conduction band offset with a negative electron barrier height was maintained.
机译：富钛氧化物状态（x <0.5）的非晶Ti1-xAlxOy膜通过异丙醇钛，三甲基铝和H2O前体化学反应的原子层沉积法沉积在p型GaAs上。检查了所得材料及其下层基板的电性能和能带排列，并在富含Ti氧化物的Ti1-xAlxOy膜的累积区域中观察到明显的频率色散。尽管通过在Ti1-xAlxOy膜中添加更多的Al氧化物可以在某种程度上实现进一步降低频率色散和泄漏电流（在栅极电子注入下），但同时降低介电常数被证明是寻找最佳成分的问题用作GaAs上的栅极电介质。富含Ti氧化物的Ti1-xAlxOy薄膜的光谱带取向测量表明，随着Al氧化物的添加，带隙的增加相当缓慢，这主要是由价带偏移的增加所补偿，而保持了几乎恒定的导带偏移和负电子势垒高度。

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