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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Mitigation of plasma-induced damage in porous low-k dielectrics by cryogenic precursor condensation
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Mitigation of plasma-induced damage in porous low-k dielectrics by cryogenic precursor condensation

机译：低温前体冷凝可减轻等离子体在多孔低k电介质中的破坏

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摘要

The present work describes the plasma etch properties of porous organo-silicate materials at cryogenic temperature. The mechanism of plasma damage is studied by means of in situ ellipsometry and post-etch material evaluation. Using conventional volatile reactants such as SF6, it is found that low plasma damage can be achieved below -120 degrees C through two main channels: pore sidewall passivation by molecular SF6 and partial condensation of non-volatile etch by-products. The protection can be enhanced by means of gas phase precursors with low saturated vapor pressure. Using C4F8, complete pore filling is achieved at -110 degrees C and negligible plasma-induced damage is demonstrated on both blanket and patterned low-k films. The characteristics of the precursor condensation process are described and discussed in detail, establishing an optimal process window. It is shown that the condensation temperature can be raised by using precursors with even lower vapor pressure. The reported in situ densification through precursor condensation could enable damage-free plasma processing of mesoporous media.
机译：本工作描述了多孔有机硅酸盐材料在低温下的等离子体蚀刻性能。通过原位椭圆偏振法和蚀刻后材料评估研究了等离子体破坏的机理。发现使用常规的挥发性反应物（例如SF6）时，可通过两个主要通道在-120℃以下实现低等离子体破坏：分子SF6引起的孔侧壁钝化和非挥发性蚀刻副产物的部分缩合。可以通过具有低饱和蒸气压的气相前体来增强保护。使用C4F8，在-110摄氏度下可以完全填充孔，并且在毯状和图案化的低k膜上均显示出可忽略的等离子体诱导的损伤。详细描述和讨论了前驱体缩合过程的特征，从而建立了最佳的过程窗口。结果表明，通过使用蒸汽压更低的前体可以提高冷凝温度。据报道，通过前体缩合进行的原位致密化可以实现介孔介质的无损等离子体处理。

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