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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >UV/ozone assisted local graphene (p)/ZnO(n) heterojunctions as a nanodiode rectifier
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UV/ozone assisted local graphene (p)/ZnO(n) heterojunctions as a nanodiode rectifier

机译：UV /臭氧辅助的局部石墨烯（p）/ ZnO（n）异质结作为纳米二极管整流器

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摘要

Here we report the fabrication of a novel graphene/ZnO nanodiode by UV/ozone assisted oxidation of graphene and demonstrate its application as a half-wave rectifier to generate DC voltage. The method involves the use of electrospinning for one-step in situ synthesis and alignment of single Gr/ZnO nanocomposite across metal electrodes. On subsequent UV illumination, graphene oxidizes, which induces p type doping and ZnO being an n type semiconductor, thus resulting in the formation of a nanodiode. The as-fabricated device shows strong non-linear current-voltage characteristic similar to that of conventional semiconductor p-n junction diodes. Excellent rectifying behavior with a rectification ratio of similar to 10(3) was observed and the nanodiodes were found to exhibit long-term repeatability in their performance. Ideality factor and barrier height, as calculated by the thermionic emission model, were found to be 1.6 and 0.504 eV respectively. Due to the fact that diodes are the basic building blocks in the electronics and semiconductor industry, the successful fabrication of these nanodiodes based on UV assisted p type doping of graphene indicates that this approach can be used for developing highly scalable and efficient components for nanoelectronics, such as rectifiers and logic gates that find applications in numerous fields.
机译：在这里，我们报告了通过紫外线/臭氧辅助氧化石墨烯制备新型石墨烯/ ZnO纳米二极管的过程，并展示了其作为半波整流器产生直流电压的应用。该方法涉及将电纺丝用于一步原位合成和跨金属电极排列单个Gr / ZnO纳米复合材料的过程。在随后的紫外线照射下，石墨烯氧化，这会引起p型掺杂，而ZnO是n型半导体，从而导致形成纳米二极管。所制造的器件显示出与常规半导体p-n结二极管相似的强非线性电流-电压特性。观察到优异的整流性能，其整流比与10（3）相似，并且发现纳米二极管在其性能方面显示出长期的可重复性。通过热电子发射模型计算出的理想因子和势垒高度分别为1.6和0.504 eV。由于二极管是电子和半导体行业的基本组成部分，基于紫外线辅助p型掺杂石墨烯的纳米二极管的成功制造表明，该方法可用于开发高度可扩展且高效的纳米电子器件，例如整流器和逻辑门，它们在众多领域中都有应用。

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