Huge magnetoresistance in graphene-based magnetic tunnel junctions with superlattice barriers

Chen C. H.; Chao B. S.; Hsueh W. J.

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Huge magnetoresistance in graphene-based magnetic tunnel junctions with superlattice barriers

机译：具有超晶格势垒的石墨烯磁性隧道结中的巨大磁阻

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Combining the features of graphene, spintronics and superlattices, this study reports huge tunnel magnetoresistance achieved using graphene-based magnetic tunnel junctions with superlattice barriers. Our calculation results show that the tunnel magnetoresistance of as much as 10(7)% is obtained using a magnetic tunnel junction with a six-cell superlattice barrier. This magnetoresistance increases as the number of cells in the superlattice barrier increases. This remarkable value can be linked to the artificially tailored band structures of the superlattice barriers. This generic nature provides new opportunities for other spintronics applications, using graphene superlattices.

机译：结合石墨烯，自旋电子学和超晶格的特征，本研究报告了使用具有超晶格势垒的基于石墨烯的磁性隧道结实现的巨大隧道磁阻。我们的计算结果表明，使用具有六格超晶格势垒的磁性隧道结可获得高达10（7）％的隧道磁阻。随着超晶格势垒中单元数量的增加，磁阻也增加。这个非凡的价值可以与超晶格屏障的人为定制的能带结构联系起来。这种通用性质为使用石墨烯超晶格的其他自旋电子学应用提供了新的机会。

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《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2015年第33期|共6页
作者
Chen C. H.; Chao B. S.; Hsueh W. J.;
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正文语种 eng
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graphene electronic transport; spintronics; giant magnetoresistance; superlattice;

机译：石墨烯电子输运;自旋电子学;巨磁致电阻;超晶格;

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1. Huge magnetoresistance in graphene-based magnetic tunnel junctions with superlattice barriers [J] . Chen C. H., Chao B. S., Hsueh W. J. Journal of Physics, D. Applied Physics: A Europhysics Journal . 2015,第33期

机译：具有超晶格势垒的石墨烯磁性隧道结中的巨大磁阻
2. Enhancement of tunnel magnetoresistance in magnetic tunnel junction by a superlattice barrier [J] . Chen C.H., Hsueh W.J. Applied Physics Letters . 2014,第4期

机译：超晶格势垒增强磁隧道结中的隧道磁阻
3. Enhancement of tunnel magnetoresistance in magnetic tunnel junction by a superlattice barrier [J] . C. H. Chen, W. J. Hsueh Applied Physics Letters . 2014,第4期

机译：超晶格势垒增强磁隧道结中的隧道磁阻
4. Improved tunnel magnetoresistance characteristics of magnetic tunnel junctions with a Heusler alloy thin film of Co_2MnGe and a MgO tunnel barrier [C] . Shinya Hakamata, Takayuki Ishikawa, Takao Marukame Joint MMM-Intermag Conference . 2007

机译：用Co_2mnge的Heusler合金薄膜改进磁隧道结的隧道磁阻特性和MgO隧道障碍
5. Engineering and characterizing inverse tunneling magnetoresistance magnetic tunnel junctions with novel ferromagnetic electrodes. [D] . Xiang, Hua. 2011

机译：用新型铁磁电极设计和表征逆隧穿磁阻磁隧道结。
6. Palladium (III) Fluoride Bulk and PdF3/Ga2O3/PdF3 Magnetic Tunnel Junction: Multiple Spin-Gapless Semiconducting Perfect Spin Filtering and High Tunnel Magnetoresistance [O] . Zongbin Chen, Tingzhou Li, Tie Yang, 2019

机译：氟化钯（III）和PdF3 / Ga2O3 / PdF3磁性隧道结：多重自旋无隙半导体完美的自旋滤波和高隧道磁阻
7. Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions [O] . Ikeda, Shoji, Hayakawa, Jun, Lee, Young Min, 2006

机译：隧道磁电阻对铁磁电极的依赖性 mgO势垒磁隧道结中的材料
8. Magnetic Tunnel Barriers and Associated Magnetic Tunnel Junctions with High Tunneling Magnetoresistance. [R] . Parkin, S. S. P. 2004

机译：具有高隧穿磁电阻的磁隧道势垒和相关磁隧道结。

Huge magnetoresistance in graphene-based magnetic tunnel junctions with superlattice barriers

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