...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >The effect of disorder on the electronic and magnetic properties of Mn2CoAl/GaAs heterostructures
【24h】

The effect of disorder on the electronic and magnetic properties of Mn2CoAl/GaAs heterostructures

机译：无序度对Mn2CoAl / GaAs异质结构电子和磁性的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We study the effect of disorder, including swap and antisite, on the electronic and magnetic properties of heterostructures by using extensive first-principles calculations within density functional theory. Thirteen kinds of swap disorders and sixteen kinds of antisite disorders are proposed and studied comprehensively. Our calculation reveals that disorders at the interface have low formation energies, indicating that disorders are most likely to appear at the interface instead of the deep layer. Among all kinds of disorders, Mn-1(Al) (where the interface Mn is occupied by an Al atom) and Mn-1(As) (where the interface Mn is occupied by an As atom from a GaAs slab) antisite disorders possess the lowest formation energies. This shows that the interface Mn has a higher probability of being replaced by an Al atom, and that an As atom from a GaAs slab easily diffuses into a Mn2CoAl slab and occupies the position of the interface Mn. Moreover, further study on the interface electronic structure reveals that interface spin polarization suffers dramatic reduction due to Mn-1(Al) and Mn-1(As) antisite disorders. It can be deduced that the interface state, together with Mn-1(Al) and Mn1(As) antisite disorders, may be the main causes of the low TMR ratio of Mn2CoAl/GaAs heterostructures.
机译：我们使用密度泛函理论中广泛的第一性原理研究来研究无序结构（包括交换和反位）对异质结构的电子和磁性性质的影响。提出并研究了十三种互换性疾病和十六种反位性疾病。我们的计算表明，界面处的紊乱具有较低的形成能，这表明紊乱最有可能出现在界面而不是深层。在所有类型的疾病中，Mn-1（Al）（其中Mn被Al原子占据界面）和Mn-1（As）（其中Mn被GaAs平板中的As原子占据）反位疾病具有最低的地层能量这表明界面Mn具有被Al原子取代的可能性更高，并且来自GaAs平板的As原子容易扩散到Mn 2 CoAl平板中并占据界面Mn的位置。此外，对界面电子结构的进一步研究表明，界面旋转自旋极化由于Mn-1（Al）和Mn-1（As）反位错而遭受急剧降低。可以推断，界面状态，以及Mn-1（Al）和Mn1（As）反位错，可能是Mn2CoAl / GaAs异质结构TMR比低的主要原因。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号