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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Polarisation dependence of Schottky barrier heights at ferroelectric BaTiO3/RuO2 interfaces: influence of substrate orientation and quality
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Polarisation dependence of Schottky barrier heights at ferroelectric BaTiO3/RuO2 interfaces: influence of substrate orientation and quality

机译：铁电体BaTiO3 / RuO2界面上肖特基势垒高度的极化相关性：衬底取向和质量的影响

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摘要

In situ x-ray photoelectron spectroscopy was employed to examine the change in Schottky barrier height Delta Phi(B) at BaTiO3/RuO2 interfaces upon polarisation reversal for [1 0 0], [1 1 0] and [1 1 1] oriented BaTiO3 single crystals. Compared to previous measurements on BaTiO3/RuO2 interfaces (Chen and Klein 2012 Phys. Rev. B 86 094105), the crystals exhibit a significantly reduced dependence of barrier height on polarisation direction. This is connected to a much higher polarisation of the present cystals, which is comparable to the accepted bulk polarisation of BaTiO3 of 26 mu C cm(2) and which exhibit the expected dependence on crystal orientation. This indicates a much higher crystal quality in the present experiments, which is also confirmed by a Kolmogorov-Avrami-Ishibashi like polarisation switching dynamics. It is observed that Delta Phi(B) is reduced for the [1 1 0] and [1 1 1] orientation and scales with polarisation as long as crystals from the same batch are used. The fact, that a poor polarisation hysteresis behaviour relates to a high polarisation dependence of Schottky barrier height, indicates that the electrode's ability to screen ferroelectric polarisation charges depends sensitively on crystal and/or interface quality.
机译：[1 0 0]，[1 1 0]和[1 1 1]取向的BaTiO3极化反转时，采用原位x射线光电子能谱检查了BaTiO3 / RuO2界面处肖特基势垒高度差ΔPhi（B）的变化。单晶。与先前在BaTiO3 / RuO2界面上的测量值相比（Chen和Klein 2012 Phys。Rev. B 86 094105），晶体的势垒高度对偏振方向的依赖性显着降低。这与目前的晶状体的更高的极化有关，这与公认的26μC cm（2）的BaTiO3的本体极化相当，并且表现出预期的晶体取向依赖性。这表明在本实验中具有更高的晶体质量，这也被Kolmogorov-Avrami-Ishibashi偏振切换动力学所证实。可以观察到，对于[1 1 0]和[1 1 1]方向，Delta Phi（B）会减小，并且只要使用了同一批晶体，就会随着极化而缩放。较差的极化磁滞行为与肖特基势垒高度的高度极化相关性有关，这一事实表明，电极屏蔽铁电极化电荷的能力敏感地取决于晶体和/或界面质量。

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