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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Influence of interfacial trap states on injecting and extracting of charges across a metal-organic interface
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Influence of interfacial trap states on injecting and extracting of charges across a metal-organic interface

机译：界面陷阱态对跨金属-有机界面注入和提取电荷的影响

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摘要

The processes of injecting and extracting holes across a metal-organic interface were examined. The height and the width of the corresponding Schottky barriers existing at the metal-organic interfaces were determined from the current-voltage characteristics using the Simmons approximation. The measured temperature dependence of the I-V characteristics suggest that the injection process occurred in two steps. Charge carriers were initially injected into interfacial trap states, from where they eventually hopped to the transport states of the highest occupied molecular orbital (HOMO) band of the organic p-semiconductor. Such a two-step injection process was dominant at low voltages. For large voltages, where the Fermi level of the metal electrode was located near the HOMO level, injection is dominated by direct tunneling of holes from metal to the HOMO level. The voltage ranges, for which either a twostep process or direct tunneling dominated, depended on the height and width of the Schottky barrier, but also on the depth and distribution of the interfacial trap states. For the extraction of holes from organic to metal, an increase of the extracting resistance with increasing voltage could be observed at low voltages, which is identified as a consequence of the filling of the interfacial trap states with holes from the HOMO band. For large voltages, holes were extracted from the HOMO to the Fermi level of gold in two ways: (a) in a direct transition and (b) in a two-step transition involving trap states at the interface.
机译：研究了在金属-有机界面上注入和提取空穴的过程。使用Simmons近似从电流-电压特性确定存在于金属有机界面上的相应肖特基势垒的高度和宽度。测得的I-V特性的温度依赖性表明，注入过程分两步进行。电荷载流子最初被注入界面陷阱态，从那里它们最终跳到有机p半导体的最高占据分子轨道（HOMO）带的传输态。这种两步注入过程在低电压下占主导地位。对于大电压，在金属电极的费米能级位于HOMO能级附近的情况下，注入主要由空穴从金属到HOMO能级的直接隧穿形成。两步法或直接隧穿控制的电压范围取决于肖特基势垒的高度和宽度，还取决于界面陷阱态的深度和分布。对于从有机物到金属的空穴提取，在低电压下可以观察到提取电阻随电压的增加而增加，这是由于界面陷阱态被HOMO能带中的空穴填充所致。对于大电压，从HOMO到金的费米能级的空穴提取有两种方式：（a）直接跃迁和（b）两步跃迁，涉及界面处的陷阱态。

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