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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap
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Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap

机译：钛超饱和硅在带隙上的能量下的室温光响应

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摘要

Silicon samples were implanted with high Ti doses and subsequently processed with the pulsed-laser melting technique. The electronic transport properties in the 15-300 K range and the room temperature spectral photoresponse at energies over the bandgap were measured. Samples with Ti concentration below the insulator-metal (I-M) transition limit showed a progressive reduction of the carrier lifetime in the implanted layer as Ti dose is increased. However, when the Ti concentration exceeded this limit, an extraordinary recovery of the photoresponse was measured. This result supports the theory of intermediate band materials and is of utmost relevance for photovoltaic cells and Si-based detectors.
机译：硅样品被注入高剂量的钛，随后用脉冲激光熔化技术进行处理。测量了在15-300 K范围内的电子输运性质，以及在带隙上方能量处的室温光谱光响应。 Ti浓度低于绝缘体-金属（I-M）过渡极限的样品显示，随着Ti剂量的增加，载流子寿命在注入层中逐渐减少。然而，当Ti浓度超过该极限时，测量到光响应的异常恢复。这一结果支持了中带材料的理论，并且对光伏电池和基于Si的检测器具有最大的意义。

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