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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Interaction of an argon plasma jet with a silicon wafer
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Interaction of an argon plasma jet with a silicon wafer

机译：氩等离子体射流与硅晶片的相互作用

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A filamentary discharge is ignited in an argon plasma jet under atmospheric pressure conditions. The gas discharge is characterized with voltage-current measurements, optical emission spectroscopy and an ICCD-camera with a high temporal resolution down to 10 ns. In the effluent of the plasma jet, filaments come into contact with the surface of a silicon wafer and modify it, namely etching traces are produced and microcrystals are deposited. These traces are studied with optical and electron microscopes. The material of the deposited microcrystals and the surface modifications of the silicon wafer are analyzed with Raman microspectroscopy. Amorphous silicon is found within the etching traces. The largest part of the deposited microcrystals are composed of nitratine (NaNO3) and some of them are calcite (CaCO3). Analyzing the possible reasons for the silicon wafer modifications we come to the conclusion that plasmoids, which are produced near the substrate surface by interaction with ionization waves, are a plausible explanation for the observed surface modifications of the silicon wafer.
机译：在大气压条件下，在氩气等离子束中点燃丝状放电。气体放电的特征在于电压电流测量，光学发射光谱和具有低至10 ns的高时间分辨率的ICCD相机。在等离子流的流出物中，细丝与硅晶片的表面接触并对其进行改性，即产生蚀刻痕迹并沉积微晶。这些痕迹用光学和电子显微镜研究。用拉曼光谱法分析沉积的微晶的材料和硅晶片的表面改性。在蚀刻迹线中发现了非晶硅。沉积的微晶的最大部分由硝酸盐（NaNO3）组成，其中一些是方解石（CaCO3）。分析硅晶片改性的可能原因，我们得出的结论是，通过与电离波的相互作用在基板表面附近产生的等离子体是对观察到的硅晶片表面改性的合理解释。

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