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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers
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Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers

机译：辐射和非辐射复合对厚AlGaN外延层中载流子密度和Al含量的依赖性

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摘要

Dynamics of radiative and nonradiative recombination of non-equilibrium carriers is investigated in thick AlGaN epitaxial layers with Al content ranging from 0.11 to 0.71. The internal quantum efficiency (IQE) in the epilayers was obtained using two approaches: either estimated from PL measurements or calculated using the recombination coefficients of a simple ABC model, retrieved by fitting the kinetics of light induced transient gratings (LITG). At photoexcited carrier densities below similar to 10(19) cm(-3), both approaches provided similar IQE values indicating that the simple ABC model is applicable to analyze carrier recombination at such carrier densities. The increase in IQE at higher carrier densities slowed down for the values extracted from PL considerably faster than for those obtained from LITG transients. This discrepancy is explained in terms of the mixed nature of the rate coefficient B caused by the onset of the density-activated nonradiative recombination at high carrier densities.
机译：在Al含量为0.11至0.71的厚AlGaN外延层中研究了非平衡载流子的辐射与非辐射复合动力学。外层中的内部量子效率（IQE）使用两种方法获得：通过PL测量估算或使用简单ABC模型的重组系数计算，通过拟合光诱导瞬态光栅（LITG）的动力学获得。在低于10（19）cm（-3）的光激发载流子密度下，两种方法都提供了相似的IQE值，表明简单的ABC模型适用于在这种载流子密度下分析载流子重组。从PL提取的值要比从LITG瞬变获得的值快得多，在较高的载流子密度下，IQE的增长速度减慢了。这种差异是根据速率系数B的混合特性来解释的，该速率系数B是由在高载流子密度下开始进行密度激活的非辐射重组引起的。

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