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首页> 外文期刊>Journal of Physics. Condensed Matter >Raman scattering study of background electron density in InN: a hydrodynamical approach to the LO-phonon-plasmon coupled modes
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Raman scattering study of background electron density in InN: a hydrodynamical approach to the LO-phonon-plasmon coupled modes

机译：InN中背景电子密度的拉曼散射研究：LO-声子-等离子体耦合模式的流体力学方法

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摘要

We use a hydrodynamical approach to analyse the long-wavelength LO-phonon-plasmon coupled modes observed in a set of high-quality MBE-grown InN epilayers with electron densities varying over one order of magnitude, from similar to 2 x 10(18) to similar to 2 x 10(19) cm(-3). The samples were characterized by scanning electron microscopy, x-ray diffraction and Hall measurements. The correlation observed between the E-2(high) mode frequency, and hence residual strain, and the electron density measured in the layers indicates that the differences in background electron density may be associated with threading dislocations. Owing to the low Raman signal, only the L- branch of the coupled modes can be unambiguously observed. The frequency of the L- Raman peak is, however, sensitive enough to the free electron density to allow its determination from lineshape fits to the spectra. These were carried out using an extended hydrodynamical model. Given the small bandgap energy and large conduction band nonparabolicity of InN, suitable expressions for the optical effective mass and mean square velocity that enter the hydrodynamical model were derived. Electron density values extracted from L- lineshape fits agree reasonably well with Hall determinations.
机译：我们使用流体力学方法来分析在一组高质量的MBE生长的InN外延层中观察到的长波LO-声子-等离子体耦合模式，这些层的电子密度变化一个数量级，类似于2 x 10（18）类似于2 x 10（19）cm（-3）。通过扫描电子显微镜，X射线衍射和霍尔测量来表征样品。在E-2（高）模频率以及由此产生的残余应变与各层中测得的电子密度之间观察到的相关性表明，背景电子密度的差异可能与螺纹位错有关。由于拉曼信号较低，因此只能清楚地观察到耦合模式的L-分支。然而，L-拉曼峰的频率对自由电子密度足够敏感，以允许根据线形拟合确定其光谱。这些是使用扩展的水动力模型进行的。鉴于InN的带隙能量小和导带非抛物线性大，推导了进入流体力学模型的光学有效质量和均方速度的合适表达式。从L线形中提取的电子密度值与Hall测定非常吻合。

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