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首页> 外文期刊>Nanotechnology >Modification of block copolymer lithography masks by O-2/Ar plasma treatment: insights from lift-off experiments, nanopore etching and free membranes
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Modification of block copolymer lithography masks by O-2/Ar plasma treatment: insights from lift-off experiments, nanopore etching and free membranes

机译：O-2 / AR等离子体处理的嵌段共聚物光刻掩模的修饰：升降实验，纳米孔蚀刻和自由膜的见解

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摘要

Block copolymer lithography allows for the large-area patterning of surfaces with self-assembled nanoscale features. The created nanostructured polymer films can be applied as masks in common lithography processing steps, such as lift-off and etching for pattern replication and transfer. In this work, we discuss an approach to improve the pattern replication efficiency by modification of the polymer mask prior to lithographical use by means of an O-2/Ar plasma treatment. We present a much better quality of pattern replication without loss of features, along with a precise tenability of feature sizes, that can be achieved by short mask treatment. We point out a correlation between nanopore position within the ordered arrays, expressed by its coordination number, the nanopore shape and the replication efficiency. Our experimental strategy to explain these correlations combines the indirect investigation of patterns replicated from the modified polymer masks and direct investigation of the mask top and bottom. Pattern replication is performed either in the form of gold nanodot arrays created via lift-off or nanopores transferred into a SiO2 substrate by reactive ion etching. The direct analysis of free polymer membranes released from the substrate reveals the nanopore shape at the mask top and bottom surfaces.
机译：嵌段共聚物光刻允许具有自组装纳米级特征的表面的大面积图案化。所产生的纳米结构聚合物膜可以作为普通光刻处理步骤的掩模施加，例如剥离和蚀刻以进行图案复制和转移。在这项工作中，我们讨论了通过O-2 / AR等离子体处理在光刻使用之前通过改变聚合物掩模来改善模式复制效率的方法。我们在不损失特征的情况下提出了更好的模式复制质量，以及特征尺寸的精确度，可以通过短掩模处理来实现。我们在有序数阵列内的纳米孔位置与其配位数，纳米孔形状和复制效率表示的相关性。我们解释这些相关性的实验策略结合了从改性聚合物掩模复制的模式的间接调查，并直接调查面罩顶部和底部。通过通过反应离子蚀刻通过升降截止或纳米孔产生的金纳米多特阵列的形式进行图案复制。从基材释放的游离聚合物膜的直接分析显示在掩模顶部和底表面处的纳米孔形状。

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