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首页> 外文期刊>Nanotechnology >Near- and mid-infrared intersubband absorption in top-down GaN/AlN nano- and micro-pillars
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Near- and mid-infrared intersubband absorption in top-down GaN/AlN nano- and micro-pillars

机译：自上而下的GaN / ALN纳米和微支柱中的近红外三角机吸收

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摘要

We present a systematic study of top-down processed GaN/AlN heterostructures for intersubband optoelectronic applications. Samples containing quantum well superlattices that display either near- or mid-infrared intersubband absorption were etched into nano- and micropillar arrays in an inductively coupled plasma. We investigate the influence of this process on the structure and strain-state, on the interband emission and on the intersubband absorption. Notably, for pillar spacings significantly smaller (= 1/3) than the intersubband wavelength, the magnitude of the intersubband absorption is not reduced even when 90% of the material is etched away and a similar linewidth is obtained. The same holds for the interband emission. In contrast, for pillar spacings on the order of the intersubband absorption wavelength, the intersubband absorption is masked by refraction effects and photonic crystal modes. The presented results are a first step towards micro- and nano-structured group-III nitride devices relying on intersubband transitions.
机译：我们对基间光电应用的自上而下加工GaN / AlN异质结构进行了系统研究。含有量子阱超晶格的样品，其在电感耦合等离子体中蚀刻到纳米和微米阵列中的纳米和微储物阵列中。我们研究了该过程对结构和应变状态的影响，在基间排放和基间吸收上。值得注意的是，对于柱间距显着较小（＆ = 1/3），而不是三角区波长，即使在蚀刻90％的材料中也不会降低三通带吸收的幅度，并且获得类似的线宽。相同的持有者发射。相反，对于柱间距在三通带吸收波长的顺序上，通过折射效应和光子晶体模式掩盖三通带吸收。所提出的结果是朝着依赖于梭辅转变的微型和纳米结构基团-III族氮化物装置的第一步。

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