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Wafer-scale fabrication of fused silica chips for low-noise recording of resistive pulses through nanopores

机译：通过纳米孔的电阻脉冲低噪声记录的熔合型二氧化硅芯片的晶片刻度制造

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This paper presents a maskless method to manufacture fused silica chips for low-noise resistive-pulse sensing. The fabrication includes wafer-scale density modification of fused silica with a femtosecond-pulsed laser, low-pressure chemical vapor deposition (LPVCD) of silicon nitride (SiNx) and accelerated chemical wet etching of the laser-exposed regions. This procedure leads to a freestanding SiNx window, which is permanently attached to a fused silica support chip and the resulting chips are robust towards Piranha cleaning at similar to 80 degrees C. After parallel chip manufacturing, we created a single nanopore in each chip by focused helium-ion beam or by controlled breakdown. Compared to silicon chips, the resulting fused silica nanopore chips resulted in a four-fold improvement of both the signal-to-noise ratio and the capture rate for signals from the translocation of IgG(1) proteins at a recording bandwidth of 50 kHz. At a bandwidth of similar to 1 MHz, the noise from the fused silica nanopore chips was three-to six-fold reduced compared to silicon chips. In contrast to silicon chips, fused silica chips showed no laser-induced current noise-a significant benefit for experiments that strive to combine nanopore-based electrical and optical measurements.
机译：本文介绍了用于制造用于低噪声电阻脉冲感测的熔融二氧化硅芯片的掩模方法。该制造包括熔融二氧化硅的晶片级密度改性，具有飞秒脉冲激光，氮化硅（SiNx）的低压化学气相沉积（LPVCD），并加速激光暴露区域的化学湿法蚀刻。该过程导致独立的SINX窗口，该窗口永久地连接到熔融二氧化硅支持芯片，所得到的芯片对类似于80摄氏度的Piranha清洁的稳健性。在并行芯片制造后，我们通过聚焦在每个芯片中创建了一个纳米孔氦离子束或受控击穿。与硅芯片相比，所得熔融二氧化硅纳米液芯片导致信号 - 噪声比和从IgG（1）蛋白易位的信号的捕获速率改善了50kHz的记录带宽。在类似于1 MHz的带宽处，与硅芯片相比，熔融二氧化硅纳米孔芯片的噪声减少了三〜六倍。与硅芯片相反，熔融石英芯片显示出激光诱导的电流噪声 - 对于努力结合基于纳米孔的电气和光学测量的实验，这是一个显着的益处。

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