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Reusable nano-BG-FET for point-of-care estimation of ammonia and urea in human urine

机译:可重复使用的纳米BG-FET,用于氨和尿素中氨的护理点估算

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A back-gate-field-effect-transistor (BG-FET) has been developed to selectively detect ammonia and urea. The BG-FET was prepared on a p-type Si substrate with an n-type channel of CdS-TiO2 nanocomposite and poly-methyl methacrylate film as dielectric layer. The reusability of the sensor was ensured by putting it as a cover to a chamber where samples were detected. The BG-FET showed an increase in drain current with the increase in ammonia release from chamber because higher numbers of charge carriers were created when ammonia adsorped on CdS-TiO2 nanostructures. Control experiments suggested that the variation in current-to-voltage response of BG-FET could also be calibrated to measure the activity of a host of other hazardous gases. The lowest concentration of ammonia detected was similar to 0.85 ppm with a response time of 30 s at a gate voltage of 0.5 V or less, which were superior than available field effect transistors ammonia sensors. Addition of urease in urine liberated ammonia equivalent to urea content in urine, which could be detected by the proposed BGFET. The urea-urease enzyme catalysis reaction made the sensor specific in detecting the biomarker. The accuracy, sensitivity, and reusability of the device was found to be suitable to develop a point-of-care testing device for ammonia and urea detection.
机译:已经开发了一种背栅场效应晶体管(BG-FET)以选择性地检测氨和尿素。将BG-FET在具有Cds-TiO2纳米复合材料的n型通道和聚 - 甲基丙烯酸酯膜的P型Si底座上制备BG-FET作为介电层。通过将其作为检测样本的腔室中的盖子来确保传感器的可重用性。 BG-FET显示出漏极电流的增加随着腔室的氨释放而增加,因为当氨在Cds-TiO2纳米结构上时产生较高的电荷载流子。控制实验表明,也可以校准BG-FET的电流 - 电压响应的变化,以测量其他危险气体的活动的活动。检测到的最低浓度的氨浓度类似于0.85ppm,响应时间为30 s,栅极电压为0.5 V或更小,其优于可用的场效应晶体管氨传感器。在尿液中添加脲酶,其尿液中的尿素含量相当于尿液中的尿素含量,可以通过所提出的BGFET来检测。尿素脲酶催化反应使传感器特异于检测生物标志物。发现该装置的准确性,灵敏度和可重用性适用于开发用于氨和尿素检测的护理点测试装置。

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