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Effects of n-butyl amine incorporation on the performance of perovskite light emitting diodes

机译:正丁基掺入对钙钛矿发光二极管性能的影响

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摘要

The efficiency of perovskite light emitting diodes (PeLEDs) is crucially limited by leakage current and nonradiative recombination. Here we introduce n-butyl amine (BA) to modulate the growth of perovskite films as well as improve the performance of PeLEDs, and investigate in detail the effects of BA incorporation on the structural, optical, and electrical characteristics of perovskite films The results indicate that BA would terminate the grain surface and inhibit crystal growth, leading to increased radiative recombination. However, BA overload would make the films loose and recreate shunt paths. The electrical detriment of BA overload outweighs its optical benefit. As a result, optimal PeLEDs can be obtained only with moderate BA incorporation.
机译:钙钛矿发光二极管(PELEDS)的效率是漏电流和非辐射重组的关键限制。 在这里,我们介绍正丁基胺(BA)来调节钙钛矿薄膜的生长以及改善植物的性能,并详细研究了BA掺入对钙钛矿膜的结构,光学和电特性的影响结果表明 该BA将终止晶粒表面并抑制晶体生长,导致辐射重组增加。 然而,BA过载将使电影松散而重建分流路径。 BA过载的电损害超过其光学效益。 结果,可以仅通过中等BA掺入获得最佳封面。

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  • 来源
    《Nanotechnology》 |2019年第10期|共8页
  • 作者单位

    Zhejiang Sci Tech Univ Dept Phys Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Zhejiang Peoples R China;

    Zhejiang Sci Tech Univ Dept Phys Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Zhejiang Peoples R China;

    Zhejiang Univ City Coll Coll Informat Sci &

    Elect Engn Hangzhou 310015 Zhejiang Peoples R China;

    Zhejiang Sci Tech Univ Dept Phys Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Zhejiang Peoples R China;

    Zhejiang Sci Tech Univ Dept Phys Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Zhejiang Peoples R China;

    Zhejiang Sci Tech Univ Dept Phys Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Zhejiang Peoples R China;

    Zhejiang Sci Tech Univ Dept Phys Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Zhejiang Peoples R China;

    Zhejiang Sci Tech Univ Dept Phys Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Zhejiang Peoples R China;

    Zhejiang Sci Tech Univ Dept Phys Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Zhejiang Peoples R China;

    Zhejiang Sci Tech Univ Dept Phys Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Zhejiang Peoples R China;

    Zhejiang Univ State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    perovskite light emitting diodes; bulky organic cations; butyl amine; crystal growth; optical and electrical characteristics;

    机译:Perovskite发光二极管;庞大的有机阳离子;丁胺;晶体生长;光学和电气特性;

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