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Nanoscale charge transport and local surface potential distribution to probe defect passivation in Ag doped Cu2ZnSnS4 absorbing layer

机译:纳米级电荷传输和局部表面电位分布,探测抗掺杂Cu2zNSNS4吸收层中的缺陷钝化

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The performance of earth abundant Cu2ZnSnS4 (CZTS) material is limited by high deficit of open circuit voltage (V-OC) which is mainly due to the easy formation of Cu-Zn antisite defects. Suppression of Cu-Zn defects is thus inevitably required for further developments in CZTS based solar cells. We studied systematic increase of Ag doping in CZTS thin film and investigated the nanoscale electrical properties using Kelvin probe force microscopy and current sensing atomic force microscopy (CAFM) to probe Cu-Zn defects. Crystallographic analysis indicated the successful partial substitution of Cu+ ions by large size Ag+ ions. The considerable decrease in grain boundary potential from 66.50 +/- 5.44 mV to 13.50 +/- 2.61 mV with Ag doping, suggesting the substantial decrease in Cu-Zn defects. Consequently, CAFM measurement confirms the remarkable increment in minority carrier current with Ag doping and their local mobility in CZTS layer. Finally, the lower persistent photoconductivity and fast decay response of photogenerated carriers for Ag doped CZTS photodetector further validate our results. This study provides a fresh approach of controlling deleterious Cu-Zn defects in CZTS by tuning Ag content that may guide researchers to develop next generation high-performance CZTS based solar cells.
机译:地球丰富Cu2zNS4(CZT)材料的性能受到高缺陷的开路电压(V-OC)的限制,主要是由于Cu-Zn防铠缺陷的易于形成。因此,不可避免地需要抑制Cu-Zn缺陷的基于CZTS的太阳能电池中的进一步发展。我们研究了CZTS薄膜中的Ag掺杂系统的系统增加,并研究了利用开尔文探针显微镜和电流检测原子力显微镜(CAFM)来研究纳米级电性能以探测Cu-Zn缺陷。结晶分析表明,通过大尺寸Ag +离子成功部分取代Cu +离子。具有66.50 +/- 5.44mV至13.50 +/- 2.61 mV的晶界电位相当大的降低,具有AG掺杂,表明Cu-Zn缺陷的显着降低。因此,CAFM测量证实了少数竞争载流量的显着增量,具有AG掺杂及其在CZTS层中的局部迁移率。最后,对Ag掺杂CZTS光电探测器的光生载体的较低持续光电导和快速衰减响应进一步验证了我们的结果。该研究通过调整AG含量,提供了一种控制CZTS中的有害Cu-Zn缺陷的新方法,这些方法可以指导研究人员开发基于下一代高性能CZTS的太阳能电池。

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