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首页> 外文期刊>Nanotechnology >Side-gated, enhancement mode, InAs nanowire double quantum dot devices-toward controlling transverse electric fields in spin-transport measurements
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Side-gated, enhancement mode, InAs nanowire double quantum dot devices-toward controlling transverse electric fields in spin-transport measurements

机译：侧面门控，增强模式，INAS纳米线双量子点装置 - 控制旋转传输测量中的横向电场

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摘要

A double quantum dot system with a definitive transverse electric field in the plane of the sample is defined by combining a facile side-gating technique with enhancement mode InAs nanowires. Positive bias on the plunger gates enhance quantum dot segments along the nanowire, negative bias on barrier gates deplete regions, and situating gates biased at opposite polarities on opposing sides of the nanowire allows an electric field to be engineered. With sufficiently biased barrier regions stable bias triangle features are observed in the weak interdot coupling regime. The singlet-triplet energy splitting Delta(ST) in Pauli spin-blockaded features is studied as a function of an external magnetic field applied perpendicular to the sample plane. We interpret an apparent absence of mixing between singlet and triplet states as an indication that the spin-orbit field is oriented out of the sample plane due to the induced electric field. Finally, we discuss the potential of combining advanced gating architectures with enhancement mode nanowires to control the orientation of the spin-orbit field-a prospect that could enable multiple, nanowire-based spin-qubits to be operated on a single chip with a fixed-angle external magnetic field applied.
机译：通过将具有增强模式INAS纳米线组合的容纳侧门络技术相结合来限定样品平面中具有明确横向电场的双量子点系统。柱塞栅极上的正偏压增强了沿纳米线的量子点段，屏障栅极耗尽区域的负偏压，并且在纳米线的相对侧上的相反极性上偏置的情况偏置允许改造电场。利用足够偏置的屏障区域，在弱的闭管耦合状态下观察到稳定的偏置三角形特征。在垂直于样品平面施加的外部磁场的函数研究了Pauli旋转间隔特征中的单向三联能量分裂Δ（ST）。我们解释单向和三联状态之间的明显缺乏混合，以指示由于诱导的电场而导致自旋轨道场被取向样品平面。最后，我们讨论了将先进的门控架构与增强模式纳米线组合以控制旋转轨道场的方向 - 一种可以在单个芯片上操作多个基于纳米线的旋转Qubits的前景，以固定 - 角度外部磁场施加。

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