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首页> 外文期刊>Nanotechnology >Absorption of light in a single vertical nanowire and a nanowire array
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Absorption of light in a single vertical nanowire and a nanowire array

机译：在单个垂直纳米线和纳米线阵列中吸收光

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摘要

Both a single III-V semiconductor nanowire and an array of such nanowires have shown promise for solar cell applications. However, the correspondence between the optical properties of the single nanowire and the nanowire array has not been studied. Here, we perform electromagnetic modeling of InP nanowires to study this relationship. We find that a single nanowire can show at an absorption peak, a remarkably high absorption cross-section that is more than 50 times the geometrical cross-section. With optimization of the diameter of the single nanowire, the short-circuit current density is 30 times higher than in a bulk solar cell. With such a strong absorption, we predict an apparent efficiency 500% for the single nanowire solar cell. In contrast, we show that an efficient nanowire array solar cell cannot rely on strong absorption just through the absorption peak. Instead, the nanowires need to be packed rather closely to enhance the absorption of the full solar spectrum. At the optimum diameter for the nanowire array, neighboring nanowires compete strongly for absorption of incident photons at the absorption peak, which limits the absorption per nanowire by a factor of 18. As a result, the single InP nanowire is optimized at a diameter of 110 nm while the nanowires in the array are optimized at a considerably larger diameter of 180 nm. Importantly, we show analytically the coupling efficiency of incident light into the fundamental HIE11 guided mode and consecutive absorption of the mode in the nanowires. With that analysis, we explain that a single nanowire shows two different absorption pathways-one through coupling into the guided mode and another by coupling into the nanowire through the sidewall. This analytical analysis also shows at which period the neighboring nanowires in an array start to compete for absorption of incident photons.
机译：单个III-V半导体纳米线和这种纳米线阵列都显示出太阳能电池应用的承诺。然而，尚未研究单纳米线和纳米线阵列的光学性质之间的对应关系。在这里，我们执行INP纳米线的电磁建模，以研究这种关系。我们发现单个纳米线可以在吸收峰处显示出一个非常高的吸收横截面，其几何横截面大于50倍。通过优化单纳米线的直径，短路电流密度比散装太阳能电池高30倍。通过如此强烈的吸收，我们预测了单个纳米线太阳能电池的表观效率。500％。相比之下，我们表明，仅通过吸收峰依赖于高效的纳米线阵列太阳能电池。相反，纳米线需要密切地填充，以增强全太阳光谱的吸收。在纳米线阵列的最佳直径处，相邻的纳米线强烈竞争吸收峰值的入射光子，这限制了每纳米线的吸收量为18倍。结果，单个InP纳米线在110的直径下进行优化阵列中的纳米线以相当大的直径为180nm进行优化。重要的是，我们将入射光的耦合效率分析到基本HIE11引导模式和纳米线中模式的连续吸收。通过该分析，我们解释了单个纳米线，通过耦合到通过侧壁通过耦合到纳米线中，单个纳米线显示出​​两种不同的吸收途径-1。该分析分析还示出了阵列中相邻纳米线的时间开始，以竞争入射光子的吸收。

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