Composition modulation by twinning in InAsSb nanowires

Schnedler M.; Xu T.; Portz V; Nys J-P; Plissard S. R.; Berthe M.; Eisele H.; Dunin-Borkowski R. E.; Ebert P.; Grandidier B.

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Composition modulation by twinning in InAsSb nanowires

机译：在INASSB纳米线中通过孪生组成调节

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摘要

We observe a composition modulated axial heterostructure in zincblende (ZB) InAs0.90Sb0.10 nanowires initiated by pseudo-periodic twin boundaries using scanning tunneling microscopy. The twin boundaries exhibit four planes with reduced Sb concentration due to a lower Sb incorporation during lateral overgrowth of a 4H wurtzite as compared to a ZB stacking sequence. We anticipate that this leads to compositional band offsets in addition to known structural band offsets present between 4H and ZB polytypes, changing the band alignment from type II to type I.

机译：我们观察在Zincblende（Zb）中的组合物调节轴向异质结构，其使用扫描隧道显微镜通过伪周期性双界引发的纳米线。由于与ZB堆叠序列相比，双界性具有降低的Sb浓度降低了Sb浓度的四个平面。我们预期这导致组成带偏移除了在4H和ZB多型之间存在的已知结构频带偏移之外，从II型键入I型的带对准。

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来源
《Nanotechnology》 |2019年第32期|共5页
作者
Schnedler M.; Xu T.; Portz V; Nys J-P; Plissard S. R.; Berthe M.; Eisele H.; Dunin-Borkowski R. E.; Ebert P.; Grandidier B.;
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作者单位

Forschungszentrum Julich Peter Grunberg Inst D-52425 Julich Germany;

Univ Lille Univ Valenciennes CNRS ISEN Cent Lille UMR 8520 IEMN F-59000 Lille France;

Forschungszentrum Julich Peter Grunberg Inst D-52425 Julich Germany;

Univ Lille Univ Valenciennes CNRS ISEN Cent Lille UMR 8520 IEMN F-59000 Lille France;

Univ Lille Univ Valenciennes CNRS ISEN Cent Lille UMR 8520 IEMN F-59000 Lille France;

Univ Lille Univ Valenciennes CNRS ISEN Cent Lille UMR 8520 IEMN F-59000 Lille France;

Tech Univ Berlin Inst Festkorperphys Hardenbergstr 36 D-10623 Berlin Germany;

Forschungszentrum Julich Peter Grunberg Inst D-52425 Julich Germany;

Forschungszentrum Julich Peter Grunberg Inst D-52425 Julich Germany;

Univ Lille Univ Valenciennes CNRS ISEN Cent Lille UMR 8520 IEMN F-59000 Lille France;

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正文语种 eng
中图分类特种结构材料;
关键词
semiconductor nanowires; composition modulation; twin boundaries; scanning tunneling microscopy; ternary III-V compounds;

机译：半导体纳米线;组成调制;双界;扫描隧道显微镜;三元III-V化合物;

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专利

1. Composition modulation by twinning in InAsSb nanowires [J] . Schnedler M., Xu T., Portz V, Nanotechnology . 2019,第32期

机译：在INASSB纳米线中通过孪生组成调节
2. Twinning modulation in ZnSe nanowires [J] . Y Q Wang, U Philipose, T Xu, Semiconductor science and technology . 2007,第3期

机译：ZnSe纳米线中的孪生调制
3. Modulation of thermal transport in Al_xGa_(1-x)As alloy nanowires with varying compositions [J] . Zhong-Xiang Xie, Xia Yu, Xue-Kun Chen, Applied Physics Letters . 2020,第14期

机译：在Al_xga_（1-x）中的热传输的调制作为具有不同组合物的合金纳米线
4. Complex Superstructures Resulting from Compositional Modulation and Octahedral Tilt Twinning in AA'BB'O_6 Doubly Cation Ordered Perovskites [C] . Graham King, Susana Garcia-Martin, Esteban Urones-Garrote, IMAPS/ACerS International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies . 2013

机译：由AA'BB'O_6双阳离子有序的钙钛矿中的组成调节和八面体倾斜孪生栓塞
5. Energetic Consideration and Structural Characterization of Twinning in Nanowires. [D] . Wu, Chun-Hsien. 2013

机译：纳米线中孪生的能量考虑和结构表征。
6. Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak Light [O] . Xiaomei Yao, Xutao Zhang, Tingting Kang, 2021

机译：弱光下末端末端内置纳米线阵列检测器的光电性能
7. Direct Observation of Interface and Nanoscale Compositional Modulation in Ternary III-As Heterostructure Nanowires [O] . Venkatesan, Sriram, Madsen, Morten H., Schmid, Herbert, 2013

机译：界面直接观察和纳米级成分调制在三元III-作为异质结构纳米线
8. Superelasticity in bcc Nanowires by a Reversible Twinning Mechanism [R] . Li, S., Ding, X., Deng, J., 2010

机译：通过可逆孪晶机制在bcc纳米线中的超弹性

Composition modulation by twinning in InAsSb nanowires

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