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Mechanism of nucleation and critical layer formation during In/GaAs droplet epitaxy

机译：在/ GaAs液滴外延期间的成核和临界层形成机制

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摘要

Fabrication of A(III) B-V nanostructures by droplet epitaxy has many advantages over other epitaxial techniques. Although various characteristics of the growth by droplet epitaxy have been thoroughly studied for both lattice-matched and mismatched systems, little is known about physical processes hindering the formation of small size InAs/GaAs nanostructure arrays with low density and thin wetting layer. In this paper, we experimentally demonstrate that the indium droplet diameter can be reduced by decreasing the deposition time, but this reduction is limited by a critical thickness of droplet formation dependent on the substrate temperature. Using the kinetic Monte Carlo model, we propose a mechanism considering that the droplet formation begins when the system overcomes a barrier determined by the substrate attraction. As a result of physical and chemical balancing between adatom aggregation and substrate wetting, this attraction becomes weaker with increasing either temperature or deposition amount, which leads to the critical layer formation and subsequent nucleation. Using this mechanism, it is possible to provide a wide control over the nanostructure growth which is especially important at high temperatures when the processes of the island ripening are particularly intensive.
机译：通过液滴外延A（III）乙-V纳米结构的制造比其他外延技术的许多优点。虽然通过液滴外延生长的各种特性已经被彻底研究两者的晶格匹配和不匹配的系统，知之甚少阻碍的小尺寸的InAs /砷化镓纳米结构阵列具有低密度和薄润湿层形成的物理过程。在本文中，我们通过实验证明，可以通过减小沉积时间而减少的铟液滴直径，但这种减少是通过取决于衬底温度液滴形成的临界厚度的限制。使用动力学蒙特卡罗模型，我们提出考虑到液滴形成当系统克服由基板吸附确定的势垒开始的机构。由于吸附原子聚集和基材的润湿之间的物理和化学平衡的结果，这种吸引力变得与温度或沉积量，这导致增加的临界层形成和随后的成核弱。利用这种机制，它能够提供在纳米结构生长时岛成熟的工艺特别密集其是在高温下特别重要的宽控制。

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