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首页> 外文期刊>Nanotechnology >Ovonic threshold switching in polycrystalline zinc telluride thin films deposited by RF sputtering
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Ovonic threshold switching in polycrystalline zinc telluride thin films deposited by RF sputtering

机译：在RF溅射沉积的多晶锌碲化锌薄膜中的卵形阈值切换

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摘要

Chalcogenide materials of the amorphous phase with low band gaps were reported to show Ovonic threshold switching (OTS), making them suitable for selection devices in cross-point memory arrays. Herein, we report that ZnTe films with polycrystalline structures show OTS behavior. Nearly stoichiometric ZnTe thin films were deposited by an RF sputtering method. X-ray diffraction analysis indicated that the films were polycrystalline. The optical band gaps of the ZnTe films were estimated as 2.2 eV from UV-visible spectroscopy transmittance measurements. Photoluminescence measurements indicated the existence of deep-level defects in the ZnTe thin films Although these ZnTe films have a polycrystalline structure with a relatively high band gap, I-V profiles show OTS characteristics, with a selectivity of over 10(4), fast threshold switching time in the sub-10 ns scale, and thermal stability up to 400 degrees C. ZnTe also shows switching endurance for more than 10(9) cycles without Vth drift, maintaining its selectivity of 10(4). Thus, we improved the threshold switching characteristics by using a wide band-gap and polycrystalline-structured ZnTe-based chalcogenide material. Post-annealing experiments indicated that the thermal budget of the ZnTe thin film was sufficient for stacked cross-point array structures, thereby overcoming a previous limitation of chalcogenide switching materials. This material is promising for application in high-density cross-point memory arrays as the selection device.
机译：据报道，具有低带间隙的非晶相的硫属化物材料以显示卵形阈值切换（OTS），使它们适用于交叉点存储器阵列中的选择装置。在此，我们认为具有多晶结构的ZnTe膜显示出OTS行为。通过RF溅射法沉积几乎是化学计量的ZnTe薄膜。 X射线衍射分析表明薄膜是多晶的。 ZnTe膜的光带间隙从UV可见光谱透射率测量估计为2.2eV。光致发光测量表明，ZnTe薄膜中的深度缺陷存在，尽管这些ZnTe膜具有具有相对高带隙的多晶硅结构，但IV轮廓显示出OTS特性，选择性超过10（4），快速阈值切换时间在Sub-10 NS刻度中，热稳定性高达400℃的ZnTe还显示出超过10（9）个循环的切换耐久性而没有VTH漂移，保持其选择性10（4）。因此，我们通过使用宽带间隙和多晶结构ZnTe基硫属化物材料来改善阈值切换特性。退火后实验表明，ZnTe薄膜的热预算足以用于堆叠的交叉点阵列结构，从而克服了硫属化物切换材料的先前限制。这种材料是希望在高密度交叉点存储器阵列中应用作为选择装置。

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