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Growth, morphology and electronic properties of epitaxial graphene on vicinal Ir(332) surface

机译：外延石墨烯的生长，形态和电子性质在邻近IR（332）表面上

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摘要

Superlattice induced minigaps in graphene band structure due to underlying one-dimensional nanostructuration has been demonstrated. A superperiodic potential can be introduced in graphene if the substrate is periodically structured. The successful preparation of a periodically nanostructured substrate in large scale can be obtained by carefully studying the electronic structure with a spatial averaging technique such as high-energy resolution photoemission. In this work, we present two different growth methods such as temperature programmed growth (TPG) and chemical vapor deposition (CVD) studied by scanning tunnelling microscopy (STM) and low energy electron diffraction (LEED). In both methods, we show that the original steps of Ir(332) have modified with (111) terraces and step bunching after graphene growth. Graphene grows continuously over the terrace and the step bunching areas. We observe that while TPG growth does not give rise to a well-defined surface periodicity required for opening a bandgap, the CVD growth does. By combining with angle-resolved photoemission spectroscopy (ARPES) measurements, we correlate the obtained spatial periodicity to observed band gap opening in graphene.
机译：已经证明了由于底层的一维纳米结构引起的石墨烯带结构中的超晶格诱导的MINIGAP。如果基板周期性地，则可以在石墨烯中引入超级周期性电位。通过小心地研究具有诸如高能量分辨率光曝光的空间平均技术，可以通过仔细研究电子结构来获得大规模定期纳米结构基板的成功制备。在这项工作中，我们提出了两种不同的生长方法，例如通过扫描隧道显微镜（STM）和低能量电子衍射（LEED）研究的温度编程的生长（TPG）和化学气相沉积（CVD）。在这两种方法中，我们表明IR（332）的原始步骤已经用（111）梯度和石墨烯生长后的步骤进行了修改。石墨烯在露台上连续增长，并迈出阶梯区。我们观察到，虽然TPG的增长不会产生打开带隙所需的明确定义的表面周期，但CVD生长确实如此。通过与角度分辨的光曝光光谱（ARPES）测量相结合，我们将所获得的空间周期性与Vablene中观察到的带间隙开口相关联。

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