Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

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Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

机译：了解高温反向偏置应力下的线程脱位对4H-SIC MOSFET故障的作用

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The origin of dielectric breakdown was studied on 4H-SiC MOSFETs that failed after three months of high temperature reverse bias stress. A local inspection of the failed devices demonstrated the presence of a threading dislocation (TD) at the breakdown location. The nanoscale origin of the dielectric breakdown was highlighted with advanced high-spatial-resolution scanning probe microscopy (SPM) techniques. In particular, SPM revealed the conductive nature of the TD and a local increase of the minority carrier concentration close to the defect. Numerical simulations estimated a hole concentration 13 orders of magnitude larger than in the ideal 4H-SiC crystal. The hole injection in specific regions of the device explained the failure of the gate oxide under stress. In this way, the key role of the TD in the dielectric breakdown of 4H-SiC MOSFET was unambiguously demonstrated.

机译：在4H-SIC MOSFET上研究了介电击穿的起源，在高温反向偏置应力的三个月后失败。失败设备的本地检查显示了故障位置处存在线程位错（TD）。通过先进的高空间分辨率扫描探针显微镜（SPM）技术突出了介电击穿的纳米级起源。特别是，SPM揭示了TD的导电性和局部增加的少数载体浓度接近缺陷。数值模拟估计小于理想的4H-SiC晶体的孔浓度13的数量级。该装置的特定区域中的空穴注入解释了栅极氧化物在应力下的故障。以这种方式，明确证明了TD在4H-SiC MOSFET的介电击穿中的关键作用。

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《Nanotechnology》 |2020年第12期|共6页
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正文语种 eng
中图分类特种结构材料;
关键词
dielectric breakdown; threading dislocation; 4H-SiC; power MOSFET;

机译：介电击穿;穿线脱位;4h-SiC;功率MOSFET;

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1. Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress [J] . Nanotechnology . 2020,第12期

机译：了解高温反向偏置应力下的线程脱位对4H-SIC MOSFET故障的作用
2. Threading dislocation movement in AlGaN/GaN-on-Si high electron mobility transistors under high temperature reverse bias stressing [J] . W. A. Sasangka, G. J. Syaranamual, R. I. Made, AIP Advances . 2016,第9期

机译：高温反向偏置应力下AlGaN / GaN-on-Si高电子迁移率晶体管中的螺纹位错运动
3. Gate oxide stability of 4H-SiC MOSFETs under on/off-state bias- temperature stress [J] . Marko J. Tadjer, A. Constant, P. Godignon, Materials science forum . 2013,第期

机译：4H-SiC MOSFET在开/关状态偏置温度应力下的栅极氧化物稳定性
4. Observation of negative bias temperature instabilities in parasitic p-channel MOSFETs occurring during high-temperature reverse-bias stressing of trench-gated n-channel MOSFETs [C] . Hao Jifa, Rioux Mark, Awadelkarim Osama O. 2011 IEEE International Integrated Reliability Workshop Final Report . 2011

机译：观察沟槽门控n沟道MOSFET的高温反向偏置应力期间发生的寄生p沟道MOSFET的负偏置温度不稳定性
5. Threading Dislocation Characterization and Stress Mapping Depth Profiling via Ray Tracing Technique. [D] . Zhou, Tianyi. 2013

机译：通过射线追踪技术进行螺纹位错表征和应力映射深度剖析。
6. Forward Voltage Drop Induced by an Abnormal Threading Dislocation Aggregation in 4H-SiC GTO Devices [O] . Yingxin Cui, Peng Dong, Zhe Chen, 2019

机译：4H-SiC GTO器件中异常的位错聚集引起的正向压降
7. Nanoscale Insights on the Origin of the Power MOSFETs Breakdown after Extremely Long High Temperature Reverse Bias Stress [O] . Patrick Fiorenza, Mario Alessandrino, Beatrice Carbone, 2020

机译：纳米级洞察对功率MOSFET的起源崩溃，高温高温反向偏置应力
8. Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (<250 V) 4H-SiC pn Junction Diodes - Part 1: DC Properties [R] . Neudeck, Philip G., Huang, Wei, Dudley, Michael 1999

机译：低压（＆lt; 250 V）4H-siC pn结二极管中体积和基本螺旋位错辅助反向击穿的研究 - 第1部分：直流特性

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

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