• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >Epitaxial growth and characterization of high quality Bi2O2Se thin films on SrTiO3 substrates by pulsed laser deposition
【24h】

Epitaxial growth and characterization of high quality Bi2O2Se thin films on SrTiO3 substrates by pulsed laser deposition

机译：脉冲激光沉积在SRTIO3基材上高质量Bi2O2Se薄膜的外延生长和表征

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Recently, Bi2O2Se was revealed as a promising two-dimensional (2D) semiconductor for next generation electronics, due to its moderate bandgap size, high electron mobility and pronounced ambient stability. Meanwhile, it has been predicted that high-quality Bi2O2Se-related heterostructures may possess exotic physical phenomena, such as piezoelectricity and topological superconductivity. Herein, we report the first successful heteroepitaxial growth of Bi2O2Se films on SrTiO3 substrates via pulsed laser deposition (PLD) method. Films obtained under optimal conditions show an epitaxial growth with the c axis perpendicular to the film surface and the a and b axes parallel to the substrate. The growth mode transition to three-dimensional (3D) island from quasi-2D layer of the heteroepitaxial Bi2O2Se films on SrTiO3 (001) substrates is observed as prolonging deposition time of films. The maximum value of electron mobility reaches 160 cm(2) V-1 s(-1) at room temperature in a 70 nm thick film. The thickness dependent mobility provides evidence that interface-scattering is likely to be the limiting factor for the relatively low electron mobility at low temperature, implying that the interface engineering as an effective method to tune the low temperature electron mobility. Our work suggests the epitaxial Bi2O2Se films grown by PLD are promising for both fundamental study and practical applications.
机译：最近，由于其中等的带隙尺寸，高电子迁移率和明显的环境稳定性，Bi2O2Se被揭示为下一代电子器件的有希望的二维（2D）半导体。同时，已经预测，高质量的Bi2O2se相关的异质结构可能具有异国情调的物理现象，例如压电和拓扑超导性。在此，我们通过脉冲激光沉积（PLD）方法在SRTIO3基板上报道Bi2O2Se膜的第一种成功的异膜生长。在最佳条件下获得的薄膜显示出与膜表面的C轴和平行于基板的A和B轴的外延生长。观察到从SRTIO3（001）衬底上的杂膜Bi2O2Se膜的QuAsi-2D层的三维（3D）岛的增长模式过渡作为薄膜的延长沉积时间。电子迁移率的最大值在室温下在70nm厚的薄膜中达到160cm（2）V-1s（-1）。厚度依赖性迁移率提供了界面散射可能是低温相对低的电子迁移率的限制因素，这意味着界面工程作为调节低温电子迁移率的有效方法。我们的工作表明，PLD增长的外延Bi2O2SE电影是对基础研究和实际应用的承诺。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号