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Facile fabrication of eutectic gallium-indium alloy nanostructure and application in photodetection

机译：共晶镓 - 铟合金纳米结构和在光电检测中的舒适性制造

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摘要

Eutectic gallium-indium (EGaIn) alloy is a kind of liquid metal and has attracted much attention due to good properties. In order to satisfy the trend of miniaturization and realize more practical applications, the exploration for preparation method and properties of EGaIn at nanoscale are very important. Here, facile vacuum thermal evaporation method is developed to fabricate EGaIn nanostructures. The EGaIn nanoparticle and nanofilm with naturally formed 5 nm thick oxide layers are well prepared. The oxide film formed on the EGaIn surface is an important factor, making the properties of the nanostructure different from the properties of the bulk. Compared with ignorance of oxide layer in bulk materials, the proportion of oxide layer increases evidently in nanostructures, which produce obvious influence on the electric and optical properties. The rectifying characteristic and optoelectronic performance are experimentally observed. The EGaIn nanostructures can generate evident photocurrent responses with good responsivities (similar to 1 mA W-1) and response speed (similar to 1 s) under irradiation of 206 nm, 405 nm, 532 nm, 635 nm, 808 nm, 1064 nm and 10.6 mu m lasers. These properties are completely different from the metallic properties of EGaIn bulk material.
机译：共晶镓 - 铟（Egain）合金是一种液态金属，并且由于良好的性能而引起了许多关注。为了满足小型化的趋势并实现更实际的应用，纳米载体的制备方法和性质的探索非常重要。这里，开发了容易真空热蒸发方法以制造Egain纳米结构。具有天然形成的5nm厚氧化物层的Egain纳米颗粒和纳米膜是充分的制备。在Egain表面上形成的氧化膜是重要因素，使得纳米结构的性质不同于块状的性质。与散装材料中的氧化物层的无知相比，氧化物层的比例显着地在纳米结构中增加，从而对电和光学性能产生明显影响。实验观察到整流特性和光电性能。 Egain纳米结构可以产生良好的响应（类似于1mA W-1）和响应速度（类似于1 s）和在206nm，405nm，532nm，635nm，808nm，1064nm和10.6 mu m激光器。这些性质与Egain散装材料的金属性质完全不同。

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