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Synthesis and photoluminescence of high density GeSe triangular nanoplate arrays on Si substrates

机译：高密度GEEE三角形纳米板阵列对Si基材的合成和光致发光

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摘要

We have grown germanium selenide (GeSe) triangular nanoplate arrays (TNAs) with a high density (3.82 x 10(6) mm(-2)) on the Si (111) substrate using a simple thermal evaporation method. The thickness and trilateral lengths of a single triangular nanoplate were statistically estimated by atomic force microscopy as 44 nm, 365 nm, 458 nm and 605 nm, respectively. Transmission electron microscopy (TEM) images and x-ray diffraction patterns show that the TNAs were composed of single crystalline GeSe phase. The Se-related defects in the lattice were also revealed by TEM images and Raman vibration modes. Unlike previously reported GeSe compounds, the GeSe TNAs exhibited temperature-dependent photoluminescence (PL). The PL peak (1.25 eV) of the TNAs at 5 K was in the gaps between those of GeSe monolayers and a few hundred thick films, revealing a close relationship between the PL peak and the thickness of GeSe. The high-density structure and temperature-dependent PL of the TNAs on the Si substrate may be useful for temperature controllable semiconductor nanodevices.
机译：我们使用简单的热蒸发方法在Si（111）衬底上具有高密度（3.82×10（6）mm（-2））的高密度（3.82×10（6）mm）的锗锗（GESE）三角形纳米层阵列（TNA）。单三角形纳米板的厚度和三边长度分别通过原子力显微镜显微镜估计为44nm，365nm，458nm和605nm。透射电子显微镜（TEM）图像和X射线衍射图案表明TNA由单晶GESE相组成。晶格中的SE相关缺陷也被TEM图像和拉曼振动模式揭示。与先前报道的GESE化合物不同，GESE TNA表现出温度依赖性的光致发光（PL）。在5 k处的TNA的PL峰（1.25eV）是GESE单层和几百厚膜之间的间隙，揭示了PL峰值与GESE的厚度之间的密切关系。 Si衬底上TNA的高密度结构和温度依赖性PL可用于温度可控半导体纳米型。

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  • 来源
    《Nanotechnology》 |2020年第28期|共7页
  • 作者

    Li Xueyan; Zhang Xi; Lv Xiaowei; Pang Jun; Lei Li; Liu Yong; Peng Yong; Xiang Gang;

  • 作者单位

    Sichuan Univ Coll Phys Chengdu 610064 Peoples R China;

    Sichuan Univ Coll Phys Chengdu 610064 Peoples R China;

    Lanzhou Univ Coll Phys Sci &

    Technol Lanzhou 730000 Peoples R China;

    Sichuan Univ Coll Phys Chengdu 610064 Peoples R China;

    Sichuan Univ Inst Atom &

    Mol Phys Chengdu 610064 Peoples R China;

    Sichuan Univ Anal &

    Testing Ctr Chengdu 610064 Peoples R China;

    Lanzhou Univ Coll Phys Sci &

    Technol Lanzhou 730000 Peoples R China;

    Sichuan Univ Coll Phys Chengdu 610064 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    GeSe; nanoplate; photoluminescence; synthesis;

    机译：GESE;纳米板;光致发光;合成;

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