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首页> 外文期刊>Nanotechnology >Enhanced performance of In(2)O(3)nanowire field effect transistors with controllable surface functionalization of Ag nanoparticles
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Enhanced performance of In(2)O(3)nanowire field effect transistors with controllable surface functionalization of Ag nanoparticles

机译：增强的（2）O（3）纳米线场效应晶体管具有可控表面官能化Ag纳米粒子的性能

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摘要

Indium oxide (In2O3) nanowire field effect transistors (FETs) have great potential in electronic and sensor applications owing to their suitable band width and high electron mobility. However, the In(2)O(3)nanowire FETs reported previously were operated in a depletion-mode, not suitable to the integrated circuits result of the high-power consumption. Therefore, tuning the electrical properties of In(2)O(3)nanowire FETs into enhancement-mode is critical for the successful application in the fields of high-performance electronics, optoelectronics and detectors. In the work, a simple but effective strategy was carried out by preparing Ag nanoparticle functionalized In(2)O(3)NWs to regulate the threshold voltage (V-th) of In2O3NW FETs, successfully achieving enhanced-mode devices. The threshold voltage can be regulated from -6.9 V to +7 V by controlling Ag density via deposition time. In addition, the devices exhibited high performance: huge I-on/I(off)ratio > 10(8), large maximum saturation current approximate to 800 mA and excellent carrier mobility approximate to 129 cm(2)Vcs(-1). The enhanced performance is attributed to the surface passivation by Ag nanoparticles to reduce the density of traps and the charge transfer between traps and the nanowires to regulate the V-th. The result indicates the application of metal nanoparticles significantly improve oxide NW for low-power FETs.
机译：由于其合适的带宽和高电子迁移率，氧化物氧化物（In2O3）纳米线效应晶体管（FET）具有很大的电子和传感器应用潜力。然而，先前报道的（2）O（3）纳米线FET以耗尽模式运行，不适合于高功耗的集成电路结果。因此，将（2）O（3）纳米线FET的电性能调谐到增强模式对于成功应用于高性能电子，光电子和探测器的领域至关重要。在工作中，通过在（2）O（3）NWS中的Ag纳米粒子制备官能化以调节IN2O3NW FET的阈值电压（V-Th），成功实现增强模式装置来进行简单但有效的策略。通过通过沉积时间控制Ag密度，阈值电压可以从-6.9V到+7V调节。此外，该器件表现出高性能：巨大的I-ON / I（OFF）比率> 10（8），大致饱和电流大约为800 mA和优异的载流迁移率近似为129cm（2）VCS（-1）。增强的性能归因于Ag纳米颗粒的表面钝化，以降低陷阱的密度和陷阱和纳米线之间的电荷转移以调节V-Th。结果表明金属纳米颗粒的应用显着改善了低功率FET的氧化物NW。

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  • 来源
    《Nanotechnology》 |2020年第35期|共10页
  • 作者

    Wu Liming; Xu Jinxia; Li Qiliang; Fan Zhicheng; Mei Fei; Zhou Yuanming; Yan Jiang; Chen Ying;

  • 作者单位

    Hubei Univ Technol Hubei Key Lab High Efficiency Utilizat Solar Ener Wuhan 430068 Peoples R China;

    Hubei Univ Technol Hubei Key Lab High Efficiency Utilizat Solar Ener Wuhan 430068 Peoples R China;

    George Mason Univ Dept Elect &

    Comp Engn Fairfax VA 22030 USA;

    Hubei Univ Technol Hubei Key Lab High Efficiency Utilizat Solar Ener Wuhan 430068 Peoples R China;

    Hubei Univ Technol Hubei Key Lab High Efficiency Utilizat Solar Ener Wuhan 430068 Peoples R China;

    Hubei Univ Technol Hubei Key Lab High Efficiency Utilizat Solar Ener Wuhan 430068 Peoples R China;

    Hubei Univ Technol Hubei Key Lab High Efficiency Utilizat Solar Ener Wuhan 430068 Peoples R China;

    Hubei Univ Technol Hubei Key Lab High Efficiency Utilizat Solar Ener Wuhan 430068 Peoples R China;

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  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    In(2)O(3)nanowires FETs; threshold voltage; Ag NPs; carrier concentration;

    机译：在（2）O（3）纳米线FET;阈值电压;Ag NPS;载体浓度;

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