• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >Low consumption two-terminal artificial synapse based on transfer-free single-crystal MoS2 memristor
【24h】

Low consumption two-terminal artificial synapse based on transfer-free single-crystal MoS2 memristor

机译：基于无传输单晶MOS2函数的低消耗双终端人工突触

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Both synaptic emulators and brain-like calculation demand an energy-efficient and bio-realistic device where two-dimensional materials have been proven as a promising competitor. Lateral memristors based on transfer-free single-crystal MoS2 with single layer grown by chemical vapor deposition (CVD) were fabricated. Here the MoS2 memristor successfully emulates typical biological synaptic behaviors including excitatory/inhibitory post-synaptic current (EPSC/IPSC), spike timing-dependent plasticity (STDP), spike rate-dependent plasticity (SRDP) and long-term plasticity (LTP). Moreover, an interesting multi-state LTP and a low consumption of 1.8 pJ after LTP process are achieved which is attributed to the high resistance of transfer-free single-crystal monolayer MoS2, representing a low value among previous MoS2 devices. The migration of Sulfur vacancies lead the conductance modulation by changing the Schottky barrier instead of forming a filament. Our work demonstrates that MoS2 memristors can more flexibly satisfy the demands of complex artificial synaptic/neuron applications.
机译：突触仿真器和大脑计算都需要节能和生物现实设备，其中二维材料被证明是一个有前途的竞争对手。制造基于通过化学气相沉积（CVD）生长的单层的无传递单晶MOS2的横向忆失函数。这里MOS2映射器成功地模拟了典型的生物突触行为，包括兴奋/抑制后突触后电流（EPSC / IPSC），尖峰时序依赖性塑性（STDP），尖峰率依赖性塑性（SRDP）和长期可塑性（LTP）。此外，实现了LTP工艺之后有趣的多状态LTP和1.8PJ的低消耗，其归因于无传递单晶单层MOS2的高电阻，其代表先前MOS2器件之间的低值。硫空位的迁移通过改变肖特基势垒而不是形成灯丝来引导电导调制。我们的作品表明，MOS2椎间盘可以更灵活地满足复杂人工突触/神经元应用的需求。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号