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首页> 外文期刊>Nanotechnology >Confocal scanning photoluminescence for mapping electron and photon beam-induced microscopic changes in SiN(x)during nanopore fabrication
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Confocal scanning photoluminescence for mapping electron and photon beam-induced microscopic changes in SiN(x)during nanopore fabrication

机译：纳米孔制造期间，共聚焦扫描光致发光，用于映射电子和光子波束引起的SIN（X）中的微观变化

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摘要

Focused electron and laser beams have shown the ability to form nanoscale pores in SiN(x)membranes. During the fabrication process, areas beyond the final nanopore location will inevitably be exposed to the electron beams or the laser beams due to the need for localization, alignment and focus. It remains unclear how these unintended exposures affect the integrity of the membrane. In this work, we demonstrate the use of confocal scanning photoluminescence (PL) for mapping the microscopic changes in SiN(x)nanopores when exposed to electron and laser beams. We developed and validated a model for the quantitative interpretation of the scanned PL result. The model shows that the scanning PL result is insensitive to the nanopore size. Instead, it is dominated by the product of two microscopic material factors: quantum yield profile (i.e. variations in electronic structure) and thickness profile (i.e. thinning of the membrane). We experimentally demonstrated that the electron and laser beams could alter the material electronic structures (i.e. quantum yield) even when no thinning of the membrane occurs. Our results suggest that minimizing the unintended e-beam or laser beam to the SiN(x)during the fabrication is crucial if one desires the microscopic integrity of the membrane.
机译：聚焦电子和激光束已经显示出在SIN（X）膜中形成纳米级孔的能力。在制造过程中，由于需要定位，对准和焦点，最终纳米孔位置之外的区域将不可避免地暴露于电子束或激光束。尚不清楚这些意外暴露如何影响膜的完整性。在这项工作中，我们证明了使用共聚焦扫描光致发光（PL）来在暴露于电子和激光束时将SIN（x）纳米孔中的微观变化映射。我们开发并验证了扫描PL结果的定量解释模型。该模型表明，扫描PL结果对纳米孔尺寸不敏感。相反，它由两个微观物质因素的产物主导：量子屈服曲线（即电子结构的变化）和厚度曲线（即膜的薄薄）。我们通过实验证明，即使发生膜的不细，电子和激光束也可以改变材料电子结构（即量子产率）。我们的结果表明，如果希望膜的微观完整性最小化制造期间，在制造期间将非预期的电子束或激光束最小化至SIN（X）。

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