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首页> 外文期刊>Nanotechnology >High responsivity and fast UV?vis?short-wavelength IR photodetector based on Cd3As2/MoS2 heterojunction
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High responsivity and fast UV?vis?short-wavelength IR photodetector based on Cd3As2/MoS2 heterojunction

机译：高响应度和快速UV？VIS？基于CD3AS2 / MOS2异质结的短波长度IR光电探测器

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摘要

High responsivity, fast response time, ultra-wide detection spectrum are pursuing goals for state-of-art photodetectors. Cd3As2, as a three-dimensional (3D) Dirac semimetal, has a zero bandgap, high light absorption rate in broad spectral region, and higher mobility than graphene at room temperature. However, photoconductive detectors based Cd3As2 suffer low quantum efficiency due to the absence of high built-in field. Here, a Cd3As2 nanoplate/multilayer MoS2 heterojunction photodetector was fabricated which achieved a quite high responsivity of 2.7 & xfffd;& x5e0;10( )(3)A W-?1 at room temperature. The photodetector exhibits a short response time of in broad spectra region from ultraviolet (365 nm) to short-wavelength-infrared (1550 nm) and reached 65 ?s at 650 nm. This work provides a great potential solution for high-performance photodetector and broadband imaging by combining 3D Dirac semi-metal materials with semiconductor materials.
机译：高响应度，快速响应时间，超宽检测光谱正在追求最先进的光电探测器的目标。 CD3AS2作为三维（3D）Dirac半型，具有零带隙，宽光谱区域中的高光吸收率，并且在室温下比石墨烯更高的迁移率。 然而，由于没有高内置的场，基于光电导探测器的CD3AS2的CD3AS2遭受了低量子效率。 这里，制造了CD3AS2纳米板/多层MOS2异质结光电探测器，其达到2.7＆XFFFD的相当高的响应性;＆x 5e0; 10（）（3）在室温下为W-α1。 光电探测器在紫外（365nm）中的宽光谱区域中的短响应时间从紫外（365nm）到短波长红外（1550nm），并且在650nm处达到65.秒。 这项工作通过将3D Dirac半金属材料与半导体材料相结合，为高性能光电探测器和宽带成像提供了很大的潜在解决方案。

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  • 来源
    《Nanotechnology》 |2020年第6期|共6页
  • 作者

    Huang Zehua; Jiang Yadong; Han Qi; Yang Ming; Han Jiayue; Wang Fang; Luo Man; Li Qing; Zhu He; Liu Xianchao; Gou Jun; Wang Jun;

  • 作者单位

    Univ Elect Sci &

    Technol China Sch Optoelect Sci &

    Engn State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China Sch Optoelect Sci &

    Engn State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China Sch Optoelect Sci &

    Engn State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China Sch Optoelect Sci &

    Engn State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China Sch Optoelect Sci &

    Engn State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Sichuan Peoples R China;

    Chinese Acad Sci State Key Lab Infrared Phys Shanghai Inst Tech Phys 500 Yutian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci State Key Lab Infrared Phys Shanghai Inst Tech Phys 500 Yutian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci State Key Lab Infrared Phys Shanghai Inst Tech Phys 500 Yutian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci State Key Lab Infrared Phys Shanghai Inst Tech Phys 500 Yutian Rd Shanghai 200083 Peoples R China;

    Univ Elect Sci &

    Technol China Sch Optoelect Sci &

    Engn State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China Sch Optoelect Sci &

    Engn State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China Sch Optoelect Sci &

    Engn State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Sichuan Peoples R China;

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  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    3D Dirac semimetals; heterojunction; broadband; responsivity; photodetectors;

    机译：3D Dirac半塑料;异质结;宽带;响应性;光电探测器;

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