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Embedded sacrificial AlAs segments in GaAs nanowires for substrate reuse

机译:GaAs纳米线中的嵌入式牺牲ALAS段用于底物再利用

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We report on the use of a sacrificial AlAs segment to enable substrate reuse for nanowire synthesis. A silicon nitride template was deposited on a p-type GaAs substrate. Then a pattern was transferred to the substrate by nanoimprint lithography and reactive ion etching. Thermal evaporation was used to define Au seed particles. Metalorganic vapour phase epitaxy was used to grow AlAs-GaAs NWs in the vapour-liquid-solid growth mode. The yield of synthesised nanowires, compared to the number expected from the patterned template, was more than 80%. After growth, the nanowires were embedded in a polymer and mechanically removed from the parent substrate. The parent substrate was then immersed in an HCl:H2O (1:1) mixture to dissolve the remaining stub of the sacrificial AlAs segment. The pattern fidelity was preserved after peeling off the nanowires and cleaning, and the semiconductor surface was flat and ready for reuse. Au seed particles were then deposited on the substrate by use of pulse electrodeposition, which was selective to the openings in the growth template, and then nanowires were regrown. The yield of regrowth was less optimal compared to the first growth but the pattern was preserved. Our results show a promising approach to reduce the final cost of III-V nanowire based solar cells.
机译:我们报告使用牺牲ALAS段以使纳米线合成能够使底物再利用能够。在p型GaAs衬底上沉积氮化硅模板。然后通过纳米压印光刻和反应离子蚀刻将图案转移到基板上。热蒸发用于定义Au种子颗粒。金属有机气相外延用于在汽液 - 固体生长模式中生长Alas-GaAsnWs。与预期的图案模板预期的数量相比,合成纳米线的产率大于80%。生长后,将纳米线嵌入聚合物中并从母体底物机械地除去。然后将母体基质浸入HCl:H 2 O(1:1)混合物中以溶解牺牲酰胺链段的剩余短截线。在剥离纳米线和清洁后,保留图案保真度,并且半导体表面平坦并准备重复使用。然后通过使用脉冲电沉积在基板上沉积Au种子颗粒,其对生长模板中的开口选择性,然后再次再次进行纳米线。与第一次生长相比,再生的产量较差,但保留了图案。我们的结果表明,降低了基于III-V纳米线的太阳能电池的最终成本的有希望的方法。

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