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Low-temperature low-power PECVD synthesis of vertically aligned graphene

机译：低温低功耗PECVD合成垂直对齐的石墨烯

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摘要

The need for 2D vertical graphene nanosheets (VGNs) is driven by its great potential in diverse energy, electronics, and sensor applications, wherein many cases a low-temperature synthesis is preferred due to requirements of the manufacturing process. Unfortunately, most of today's known methods, including plasma, require either relatively high temperatures or high plasma powers. Herein, we report on a controllable synthesis of VGNs at a pushed down low-temperature boundary for synthesis, the low temperatures (450 degrees C) and low plasma powers (30 W) using capacitively coupled plasma (CCP) driven by radio-frequency power at 13.56 MHz. The strategies implemented also include unrevealing the role of Nickel (Ni) catalyst thin film on the substrates (Si/Al). It was found that the Ni catalyst on Si/Al initiates the nucleation/growth of VGNs at 450 degrees C in comparison to the substrates without Ni catalyst. With increasing temperature, the graphene nanosheets become bigger in size, well-structured and well separated. The role of Ni catalysts is hence to boost the growth rate, density, and quality of the growing VGNs. Furthermore, this CCP method can be used to synthesize VGNs at the lowest temperatures possible so far on a variety of substrates and provide new opportunities in the practical application of VGNs.
机译：对于2D垂直石墨烯纳米片（VGN）的需求由其在多种能量，电子和传感器应用中的巨大潜力驱动，其中许多情况由于制造过程的要求，优选低温合成。不幸的是，今天的大部分已知方法包括等离子体，需要相对高的温度或高等离子体功率。这里，我们在由射频功率驱动的电容耦合等离子体（CCP）上，向合成的低温边界进行报告，用于合成，低温（450摄氏度）和低等离子体功率（30W），通过射频功率驱动的电容耦合等离子体（CCP）在13.56 MHz。实施的策略还包括剥夺镍（Ni）催化剂薄膜在基材上的作用（Si / Al）。结果发现，与没有Ni催化剂的基材相比，Si / Al上的Ni催化剂在450℃下引发VGN的核肉/生长。随着温度的升高，石墨烯纳米片尺寸变得更大，结构良好，分离得很好。 Ni催化剂的作用因此促进了生长VGN的生长速率，密度和质量。此外，该CCP方法可用于在迄今为止各种基材上的最低温度下合成VGN，并在VGN的实际应用中提供新的机会。

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