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首页> 外文期刊>Nanotechnology >Defect studies on short-wave infrared photovoltaic devices based on HgTe nanocrystals/TiO(2)heterojunction
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Defect studies on short-wave infrared photovoltaic devices based on HgTe nanocrystals/TiO(2)heterojunction

机译：基于HGTE纳米晶体/ TiO（2）异质结的短波红外光伏器件缺陷研究

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摘要

Narrow bandgap (<0.5 eV) colloidal semiconductor nanocrystals (e.g. mercury chalcogenides) provide practical platforms for next generation short wave infrared, mid wave infrared and long wave infrared optoelectronic devices. Until now, most of the efforts in the field of infrared active nanocrystals have been taken on synthesizing nanocrystals, determining quantum states and building different geometries for optoelectronic devices. However, studies on interface trap states in the devices made from these narrow band gap nanocrystals are mostly unexplored. Herein, we investigate the defects or traps in these nanocrystals-embedded devices, which will be critical for improving their optoelectronic performance. In this article, we fabricate HgTe nanocrystals/TiO2 based photovoltaic devices and used capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) to investigate and obtain quantitative information on deep level trap states. Interestingly, frequency dependent C-V measurements show two peaks in the capacitance at lower frequency (<40 kHz), which is attributed to the presence of trap states. However, at high frequency the presence of a weak hump-like structure almost at the center of above two peaks validate the role of interface traps. DLTS studies show that traps at the interface of HgTe nanocrystals/TiO2 acts as recombination centers having activation energies of 0.27, 0.4 and 0.45 eV with corresponding trap densities of 1.4 x 10(10), 1.9 x 10(11) and 1.5 x 10(11) cm(-3) and estimated capture cross-sections of 6.3 x 10(-14), 7.5 x 10(-17) and 3.7 x 10(-14) cm(2), respectively. In this work, DLTS has revealed the existence of interface trap states and the frequency dependent capacitance measurements corroborate the effect of charge storage on the heterostructures built from these nanocrystals that helps in the development of futuristic devices.
机译：窄带隙（<0.5eV）胶体半导体纳米晶体（例如汞硫芥子）提供了下一代短波红外线，中波红外和长波红外光电器件的实用平台。到目前为止，已经考虑了红外活性纳米晶体领域的大多数努力，用于合成纳米晶体，确定量子状态并建立用于光电器件的不同几何形状。然而，关于由这些窄带间隙纳米晶体制成的器件中的界面陷阱状态的研究主要是未探究的。在此，我们研究了这些纳米晶体嵌入式装置中的缺陷或陷阱，这对于提高其光电性能至关重要。在本文中，我们制造了基于HGTE纳米晶体/ TiO 2的光伏器件，并使用了电容 - 电压（C-V）和深度瞬态光谱（DLT）来研究并获得深度陷阱状态的定量信息。有趣的是，频率相关的C-V测量显示较低频率（<40 kHz）的电容中的两个峰，其归因于陷阱状态。然而，在高频下，几乎在两个峰值的中心处存在弱驼峰状结构验证了界面陷阱的作用。 DLTS研究表明，HGTE纳米晶/ TiO2界面处的陷阱充当了具有0.27,0.4和0.45eV的活化能量的重组中心，其具有1.4×10（10），1.9×10（11）和1.5×10（ 11）CM（-3）和估计捕获6.3×10（-14），7.5×10（-17）和3.7×10（-14）厘米（2）的横截面。在这项工作中，DLT揭示了界面陷阱状态的存在，频率相关电容测量能够证实电荷存储对由这些纳米晶体构建的异质结构的影响，有助于开发未来派设备。

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