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Photodetector based on heterostructure of two-dimensional WSe2/In2Se3

机译：基于二维WSE2 / IN2SE3的异质结构的光电探测器

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摘要

Heterojunctions formed by two-dimensional (2D) layered semiconducting materials have been studied extensively in the past few years. These van der Waals (vdW) structures have shown great potential for future electronic and optoelectronic devices. However, the optoelectronic performance of these devices is limited by the indirect band gap of multilayer materials and low light absorption of single layer materials. Here, we fabricate photodetectors based on heterojunctions composed of n-type multilayer alpha-indium selenide (In2Se3) and p-type tungsten diselenide (WSe2) for the first time. The direct band gap of multilayer alpha-In2Se3 and type-II band alignment of the WSe2/In2Se3 heterojunction enable high optoelectronic performance of the devices at room temperature in the air. Without light illumination, the dark current is effectively suppressed to 10(-13) A under -1 V bias and a high rectification ratio of 7.37 x 10(3) is observed. Upon laser illumination with a wavelength of 650 nm, the typical heterojunction device exhibits a photocurrent on/off ratio exceeding 1.24 x 10(5), a maximum photo responsivity of 26 mA W-1 and a short photoresponse time of 2.22 ms. Moreover, the heterojunction photodetectors show obvious light response in the wavelength range from 650 nm to 900 nm. The present 2D vdW heterojunctions composed of direct band gap multilayer materials show great potential for future optoelectronic devices.
机译：通过二维（2D）层状半导体材料形成的异质局在过去几年中已经过度研究。这些范德华（VDW）结构为未来的电子和光电器件表示了很大的潜力。然而，这些装置的光电性能受多层材料的间接带隙的限制，单层材料的低光吸收。这里，我们首次制造基于由n型多层α-铟硒化烯（In2Se3）和P型钨酶（WSE2）组成的杂蚀刻的光电探测器。 WSE2 / In2Se3异质结的多层α-In2Se3和II型带对准的直接带隙，使得在空气中的室温下使器件的高光电性能。在没有光照照射的情况下，暗电流有效地抑制到10（-13）A下方-1V偏压，并且观察到高精度为7.37×10（3）。在具有650nm的波长的激光照射时，典型的异质结装置表现出超过1.24×10（5）的光电流接通和截止比，最大照片响应率为26mA W-1，并且短光响应时间为2.22ms。此外，异质结光电探测器在650nm至900nm的波长范围内显示出明显的光响应。由直接带隙多层材料组成的本发明的2D VDW杂交功能对于未来的光电器件具有很大的潜力。

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