• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >All-metal oxide synaptic transistor with modulatable plasticity
【24h】

All-metal oxide synaptic transistor with modulatable plasticity

机译：全金属氧化物突触晶体管，可塑性可塑性

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The artificial neural system has attracted tremendous attention in the field of artificial intelligence due to operate mode of parallel computation which is superior to traditional Von Neumann computers in processing complex sensory data and real-time situations with extremely low power dissipation. Remarkable progress has been made in the hardware-based electric-double-layer synaptic transistors as its modulation by ion movement is similar to biological synapse for the past few years. Unfortunately, long-term potentiation (LTP) timescale is still a big challenge in hardware-based electric-double-layer synaptic transistors which is essential to processing capacity and memory formation. Meanwhile, the effect of ion concentration on the synaptic plasticity has rarely been reported. Here, a solid state electrolyte-gated transistor using Ta2O5 as dielectric layer with unique ionic composition was demonstrated and the regulation of synaptic weight was realized by changing ion concentration. Both the potentiation and depression of synaptic weight such as excitatory post-synaptic current, inhibitory response (IPSC), paired pulse facilitation as well as LTP were successfully simulated. More importantly, oxygen vacancy content was tuned for the first time to modulate synaptic plasticity by varying film thickness and gas ratio, through which the intensity and duration of memory were enhanced with appropriate vacancy concentration. It indicated that appropriate vacancy concentration avoided the effects of internal electric field induced by ion excess, leading to a long-term memory. These results reveal a promising path to improve memory capacity of artificial synapse via ion modulation.
机译：由于并行计算的操作模式，人工神经系统在人工智能领域引起了巨大的关注，该平行计算模式优于传统的von neumann计算机，在加工复杂的感觉数据和具有极低功耗的实时情况。在基于硬件的电双层突触晶体管中已经取得了显着进展，因为它的离子运动调节与过去几年的生物突触类似。遗憾的是，长期电压（LTP）时间尺寸在基于硬件的电双层突触晶体管中仍然是一个很大的挑战，这对处理能力和内存形成至关重要。同时，据报道，离子浓度对突触塑性的影响很少。这里，通过改变离子浓度来证明使用TA2O5作为具有独特离子组成的介电层的固态电解质门控晶体管，并通过改变离子浓度来实现突触重量的调节。成功模拟了诸如兴奋性后突触电流，抑制响应（IPSC），配对脉冲促进以及LTP的突触重量的增强性和抑郁症。更重要的是，首次通过不同的膜厚度和气体比调节氧空位含量以调节突触塑性，通过该膜厚度和气体比通过适当的空位浓度来增强内存的强度和持续时间。它表明适当的空位浓度避免了通过离子过量引起的内部电场的影响，导致长期记忆。这些结果揭示了通过离子调制提高人工突触的记忆能力的有希望的路径。

著录项

  • 来源
    《Nanotechnology》 |2020年第6期|共8页
  • 作者

    Lv Dongxu; Yang Qian; Chen Qizhen; Chen Jinwei; Lai Dengxiao; Chen Huipeng; Guo Tailiang;

  • 作者单位

    Fuzhou Univ Inst Optoelect Display Natl &

    Local United Engn Lab Flat Panel Display T Fuzhou 350002 Fujian Peoples R China;

    Fuzhou Univ Inst Optoelect Display Natl &

    Local United Engn Lab Flat Panel Display T Fuzhou 350002 Fujian Peoples R China;

    Fuzhou Univ Inst Optoelect Display Natl &

    Local United Engn Lab Flat Panel Display T Fuzhou 350002 Fujian Peoples R China;

    Fuzhou Univ Inst Optoelect Display Natl &

    Local United Engn Lab Flat Panel Display T Fuzhou 350002 Fujian Peoples R China;

    Fuzhou Univ Inst Optoelect Display Natl &

    Local United Engn Lab Flat Panel Display T Fuzhou 350002 Fujian Peoples R China;

    Fuzhou Univ Inst Optoelect Display Natl &

    Local United Engn Lab Flat Panel Display T Fuzhou 350002 Fujian Peoples R China;

    Fuzhou Univ Inst Optoelect Display Natl &

    Local United Engn Lab Flat Panel Display T Fuzhou 350002 Fujian Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    synaptic transistors; oxygen vacancy; metal oxide transistors; solid state electrolyte;

    机译：突触晶体管;氧气空位;金属氧化物晶体管;固态电解质;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号