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High performance self-gating graphene/MoS2 diode enabled by asymmetric contacts

机译：高性能自胶片石墨烯/ MOS2二极管，由不对称触点启用

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摘要

A graphene-MoS2 (GM) heterostructure based diode is fabricated using asymmetric contacts to MoS2, as well as an asymmetric top gate (ATG). The GM diode exhibits a rectification ratio of 5 from asymmetric contacts, which is improved to 10(5) after the incorporation of an ATG. This improvement is attributed to the asymmetric modulation of carrier concentration and effective Schottky barrier height (SBH) by the ATG during forward and reverse bias. This is further confirmed from the temperature dependent measurement, where a difference of 0.22 eV is observed between the effective SBH for forward and reverse bias. Moreover, the rectification ratio also depends on carrier concentration in MoS2 and can be varied with the change in temperature as well as back gate voltage. Under laser light illumination, the device demonstrates strong optoelectric response with 100 times improvement in the relative photo current, as well as a responsivity of 1.9 A W-1 and a specific detectivity of 2.4 x 10(10) Jones. These devices can also be implemented using other two dimensional (2D) materials and suggest a promising approach to incorporate diverse 2D materials for future nano-electronics and optoelectronics applications.
机译：使用不对称触点与MOS2制造石墨烯-MOS2（GM）异质结构的二极管，以及不对称的顶栅（ATG）。该GM二极管显示出从非对称接触，这是一个ATG的掺入后提高到10（5）的5的整流比。该改进归因于在向前和反向偏压期间由ATG对载流子浓度和有效肖特基势垒高度（SBH）的不对称调制。从温度依赖性测量中进一步证实了这一点，其中在有效的SBH之间观察到0.22eV的差异，以便向前和反向偏置。此外，整流比还取决于MOS2中的载流子浓度，并且可以随着温度的变化以及背栅极电压而变化。在激光照射下，该装置通过相对光电流的提高100倍，以及1.9A W-1的响应度和2.4×10（10）琼斯的特定检测率，以及2.4×10（10）琼斯的响应度，该装置表现出强的光电响应。这些器件也可以使用其他二维（2D）材料来实现，并提出了一种有望的方法，可以为未来的纳米电子和光电子应用融合不同的2D材料。

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  • 来源
    《Nanotechnology》 |2018年第39期|共6页
  • 作者

    Khan Muhammad Atif; Rathi Servin; Lee Changhee; Kim Yunseob; Kim Hanul; Whang Dongmok; Yun Sun Jin; Youn Doo-Hyeb; Watanabe Kenji; Taniguchi Takashi; Kim Gil-Ho;

  • 作者单位

    Sungkyunkwan Univ Sch Elect &

    Elect Engn Dept Elect Elect &

    Comp Engn Suwon 16419 South Korea;

    Sungkyunkwan Univ Sch Elect &

    Elect Engn Dept Elect Elect &

    Comp Engn Suwon 16419 South Korea;

    Sungkyunkwan Univ Sch Elect &

    Elect Engn Dept Elect Elect &

    Comp Engn Suwon 16419 South Korea;

    Sungkyunkwan Univ Sch Elect &

    Elect Engn Dept Elect Elect &

    Comp Engn Suwon 16419 South Korea;

    Sungkyunkwan Univ Sungkyunkwan Adv Inst Nanotechnol SAINT Suwon 16419 South Korea;

    Sungkyunkwan Univ Sungkyunkwan Adv Inst Nanotechnol SAINT Suwon 16419 South Korea;

    Elect &

    Telecommun Res Inst ICT Components &

    Mat Technol Res Div Daejeon 34129 South Korea;

    Elect &

    Telecommun Res Inst ICT Components &

    Mat Technol Res Div Daejeon 34129 South Korea;

    Natl Inst Mat Sci Adv Mat Lab 1-1 Namiki Tsukuba Ibaraki 3050044 Japan;

    Natl Inst Mat Sci Adv Mat Lab 1-1 Namiki Tsukuba Ibaraki 3050044 Japan;

    Sungkyunkwan Univ Sch Elect &

    Elect Engn Dept Elect Elect &

    Comp Engn Suwon 16419 South Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    diode; rectification; MoS2; graphene;

    机译：二极管;整流;MOS2;石墨烯;

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