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Enhanced field emission properties of carbon nanotube bundles confined in SiO2 pits

机译：增强碳纳米管束局限于SiO2凹坑的场排放性能

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摘要

It has been widely reported that carbon nanotubes (CNTs) exhibit superior field emission (FE) properties due to their high aspect ratios and unique structural properties. Among the various types of CNTs, random growth CNTs exhibit promising FE properties due to their reduced inter-tube screening effect. However, growing random growth CNTs on individual catalyst islands often results in spread out CNT bundles, which reduces overall field enhancement. In this study, significant improvement in FE properties in CNT bundles is demonstrated by confining them in microfabricated SiO2 pits. Growing CNT bundles in narrow (0.5 mu m diameter and 2 mu m height) SiO2 pits achieves FE current density of 1-1.4 A cm(-2), which is much higher than for freestanding CNT bundles (76.9mA cm(-2)). From the Fowler Nordheim plots, confined CNT bundles show a higher field enhancement factor. This improvement can be attributed to the reduced bundle diameter by SiO2 pit confinement, which yields bundles with higher aspect ratios. Combining the obtained outcomes, it can be conclusively summarized that confining CNTs in SiO2 pits yields higher FE current density due to the higher field enhancement of confined CNTs.
机译：已经普遍报道，由于其高纵横比和独特的结构性能，碳纳米管（CNT）具有优异的场发射（Fe）性能。在各种类型的CNT中，随机生长CNT由于其间管间筛选效果降低而表现出有前途的Fe特性。然而，在个体催化剂岛上生长随机生长CNT经常导致散布CNT束，这减少了整体田间增强。在这项研究中，通过将它们在微制造的SiO 2凹坑中限制它们来证明CNT束中的Fe特性的显着改善。在窄（直径为0.5μm和2μm高度）SiO 2坑中生长CNT束，实现Fe电流密度为1-1.4厘米（-2），其远高于独立的CNT束（76.9ma cm（-2） ）。来自Fowler Nordheim Plots，密闭的CNT捆绑包显示出更高的现场增强因子。这种改进可以归因于SiO2坑限制的减少的束直径，其产生具有较高纵横比的束。结合所获得的结果，可以得出结论，由于狭窄的CNT的较高的场增强，SiO 2坑中的CNT在SiO 2坑中的CNT产生更高的Fe电流密度。

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  • 来源
    《Nanotechnology》 |2018年第7期|共11页
  • 作者

    Lim Yu Dian; Grapov Dmitry; Hu Liangxing; Kong Qinyu; Tay Beng Kang; Labunov Vladimir; Miao Jianmin; Coquet Philippe; Aditya Sheel;

  • 作者单位

    Nanyang Technol Univ Sch Elect &

    Elect Engn Ctr Micro Nanoelect NOVITAS 50 Nanyang Ave Singapore 639798 Singapore;

    Belarusian State Univ Informat &

    Radioelect Micro &

    Nanoelect Dept Vulica Pietrusia Brouki 6 Minsk 220013 BELARUS;

    Nanyang Technol Univ Sch Mech &

    Aerosp Engn 50 Nanyang Ave Singapore 639798 Singapore;

    Nanyang Technol Univ Sch Elect &

    Elect Engn Ctr Micro Nanoelect NOVITAS 50 Nanyang Ave Singapore 639798 Singapore;

    Nanyang Technol Univ Sch Elect &

    Elect Engn Ctr Micro Nanoelect NOVITAS 50 Nanyang Ave Singapore 639798 Singapore;

    Nanyang Technol Univ Sch Mech &

    Aerosp Engn 50 Nanyang Ave Singapore 639798 Singapore;

    CINTRA UMI CNRS NTU THALES 3288 Res Techno Plaza 50 Nanyang Dr Border 10 Block Singapore 637553 Singapore;

    Nanyang Technol Univ Satellite Res Ctr Sch Elect &

    Elect Engn 50 Nanyang Ave Singapore 639798 Singapore;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    field emission; carbon nanotubes; SiO2 pits;

    机译：场发射;碳纳米管;SiO2凹坑;

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