Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires

Giraud Paul; Hou Bo; Pak Sangyeon; Sohn Jung Inn; Morris Stephen; Cha SeungNam; Kim Jong Min

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Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires

机译：基于P型溶液处理的PBS纳米线的场效应晶体管和光电晶体管

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We demonstrate the fabrication of solution processed highly crystalline p-type PbS nanowires via the oriented attachment of nanoparticles. The analysis of single nanowire field effect transistor (FET) devices revealed a hole conduction behaviour with average mobilities greater than 30 cm(2) V (1) s (1), which is an order of magnitude higher than that reported to date for p-type PbS colloidal nanowires. We have investigated the response of the FETs to near-infrared light excitation and show herein that the nanowires exhibited gate-dependent photo-conductivities, enabling us to tune the device performances. The responsivity was found to be greater than 10(4) AW(-1) together with a detectivity of 1013 Jones, which benefits from a photogating effect occurring at negative gate voltages. These encouraging detection parameters are accompanied by relatively short switching times of 15 ms at positive gate voltages, resulting from a combination of the standard photoconduction and the high crystallinity of the nanowires. Collectively, these results indicate that solution-processed PbS nanowires are promising nanomaterials for infrared photodetectors as well as p-type nanowire FETs.

机译：我们证明的溶液的制造通过纳米颗粒的定向附接处理的高结晶性的p型的PbS纳米线。单个纳米线场效应晶体管的分析（FET）器件揭示了与平均迁移率超过30cm大的空穴传导行为（2）V（1）S（1），这是一个数量级比迄今报道的对于p更高型的PbS胶体纳米线。我们已经调查了FET的对近红外光激励的响应，并且在本文所述的纳米线表现出栅极依赖性光电导率，使我们能够调整器件性能显示。响应度被发现与1013琼斯的探测，其处出现负的栅极电压从photogating效果益处大于10（4）AW（-1）一起是。这些令人鼓舞的检测参数是伴随着在正栅极电压相对短的开关的15毫秒的时间中，从标准光电导和纳米线的高结晶度的组合产生的。总的来说，这些结果表明，溶液处理的纳米线的PbS，是约定的红外探测器，以及p型纳米线FET的纳米材料。

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来源
《Nanotechnology》 |2018年第7期|共8页
作者
Giraud Paul; Hou Bo; Pak Sangyeon; Sohn Jung Inn; Morris Stephen; Cha SeungNam; Kim Jong Min;
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作者单位

Univ Oxford Dept Engn Sci Oxford OX1 3PJ England;

Univ Oxford Dept Engn Sci Oxford OX1 3PJ England;

Univ Oxford Dept Engn Sci Oxford OX1 3PJ England;

Univ Oxford Dept Engn Sci Oxford OX1 3PJ England;

Univ Oxford Dept Engn Sci Oxford OX1 3PJ England;

Univ Oxford Dept Engn Sci Oxford OX1 3PJ England;

Univ Cambridge Dept Engn Cambridge CB3 0FA England;

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原文格式 PDF
正文语种 eng
中图分类特种结构材料;
关键词
nanowire FET; PbS; colloidal synthesis; p-type nanowires; phototransistor; photodetector;

机译：纳米线FET;PBS;胶体合成;p型纳米线;光电晶体管;光电探测器;

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1. Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires [J] . Giraud Paul, Hou Bo, Pak Sangyeon, Nanotechnology . 2018,第7期

机译：基于P型溶液处理的PBS纳米线的场效应晶体管和光电晶体管
2. Solution-Processed, Large-Area, Two-Dimensional Crystals of Organic Semiconductors for Field-Effect Transistors and Phototransistors [J] . Cong Wang, Beibei Fu, Xiaotao Zhang, ACS Central Science . 2020,第5期

机译：用于场效应晶体管和光电晶体管的溶液处理，大面积，有机半导体的二维晶体
3. Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels [J] . Ngoc Huynh Van, Jae-Hyun Lee, Dongmok Whang, Nano-Micro Letters . 2015,第1期

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4. Solution-processed top-gate-type n-channel organic field-effect transistors with silver-nanowire source/drain electrodes fabricated on polymer substrate [C] . Takatera Yuji, Kajii Hirotake, Ohmori Yutaka International Workshop on Active-Matrix Flatpanel Displays and Devices . 2014

机译：在聚合物衬底上制造具有银纳米线源/漏电极的溶液处理的顶栅型n沟道有机场效应晶体管
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Solution-Processed Large-Area Two-Dimensional Crystalsof Organic Semiconductors for Field-Effect Transistors and Phototransistors [O] . Cong Wang, Beibei Fu, Xiaotao Zhang, 2020

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7. Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires [O] . Paul Giraud, Bo Hou, Sangyeon Pak, 2018

机译：基于P型溶液处理的PBS纳米线的场效应晶体管和光电晶体管

Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires

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