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p-n junction induced electron injection type transparent photosensitive film of Cu2O/carbon quantum dots/ZnO

机译：P-n结诱导的Cu2O /碳量子点/ ZnO的电子注射型透明光敏膜

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摘要

An electron injection type transparent photosensitive Cu2O/carbon quantum dot (C QD)/ZnO p-n junction film was prepared by a simple route in which, successively, the ZnO film was prepared by a sputtering process, the C QDs and Cu2O were prepared by hydrothermal synthetic and chemical methods, then the C QDs and Cu2O were introduced onto the surface of the ZnO film. The results indicated that the C QDs and Cu2O were well combined with the ZnO film. The transparency and photosensitivity of this film were investigated, and exhibited an obvious photosensitive enhancement compared with those of the unmodified film. Through analysis, this enhancement of the photoconductivity could be attributed to the remarkable Cu2O/ZnO p-n junction and C QDs with unique up-converted photoluminescence.
机译：通过简单的途径制备电子注入型透明光敏Cu2O /碳量子点（C QD）/ ZnO PN接线膜，其中通过溅射工艺制备ZnO膜，通过水热制备C QD和Cu 2 O 合成和化学方法，将C QD和Cu 2 O引入ZnO膜的表面上。 结果表明，C QD和Cu 2O与ZnO膜很好。 研究了该薄膜的透明度和光敏性，与未改性薄膜相比，表现出明显的光敏增强。 通过分析，这种增强光电导性可以归因于具有独特上转换的光致发光的显着Cu2O / ZnO P-n结和C QD。

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