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In situ biasing and off-axis electron holography of a ZnO nanowire

机译：原位偏置和ZnO纳米线的偏置轴电子全能

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Quantitative characterization of electrically active dopants and surface charges in nano-objects is challenging, since most characterization techniques using electrons [1-3], ions [4] or field ionization effects [5-7] study the chemical presence of dopants, which are not necessarily electrically active. We perform cathodoluminescence and voltage contrast experiments on a contacted and biased ZnO nanowire with a Schottky contact and measure the depletion length as a function of reverse bias. We compare these results with state-of-the-art off-axis electron holography in combination with electrical in situ biasing on the same nanowire. The extension of the depletion length under bias observed in scanning electron microscopy based techniques is unusual as it follows a linear rather than square root dependence, and is therefore difficult to model by bulk equations or finite element simulations. In contrast, the analysis of the axial depletion length observed by holography may be compared with three-dimensional simulations, which allows estimating an n-doping level of 1 x 10(18) cm(-3) and negative sidewall surface charge of 2.5 x 10(12) cm(-2) of the nanowire, resulting in a radial surface depletion to a depth of 36 nm. We found excellent agreement between the simulated diameter of the undepleted core and the active thickness observed in the experimental data. By combining TEM holography experiments and finite element simulation of the NW electrostatics, the bulk-like character of the nanowire core is revealed.
机译：在纳米物体中的电活性掺杂剂和表面电荷的定量表征是具有挑战性的，因为使用电子[1-3]，离子[4]或场电离效应的大多数表征技术[5-7]研究了掺杂剂的化学存在不一定是电活性的。我们在具有肖特基接触的接触和偏置ZnO纳米线上进行阴极发光和电压对比度实验，并根据反向偏置的函数测量耗尽长度。我们将这些结果与最先进的轴外电子全息术相结合，同时在同一纳米线上的电气偏置。在扫描电子显微镜技术的技术中观察到的偏差下的耗尽长度是不寻常的，因为它遵循线性而不是平方根依赖性，因此难以通过批量方程或有限元模拟模型。相反，可以将全息术观察到的轴向耗尽长度的分析与三维模拟进行比较，这允许估计为1×10（18 )cm（-3）的n掺杂水平和2.5 x的负侧壁表面电荷。纳米线的10（12）厘米（-2），导致径向表面耗尽至36nm的深度。我们发现在实验数据中观察到的未浸入芯的模拟直径和在实验数据中观察到的主动厚度之间的良好一致性。通过组合TEM全息实验和NW静电装置的有限元模拟，揭示了纳米线芯的体状特征。

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