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Axial p-n junction and space charge limited current in single GaN nanowire

机译：单个GaN纳米线中的轴向P-n结和空间电荷限制电流

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摘要

The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N-a doping level was estimated to be 2-3 x 10(17) at cm(-3) assuming a donor level N-d of 2-3 x 10(18) at cm(-3). The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.
机译：个人基本的GaN的纳米结构，如纳米线的轴向的电表征（NW）p-n结，正成为不可缺少的和关键的完全控制实现的GaN NW器件。在这项研究中，电子束诱导上用等离子辅助分子束外延生长的两个单轴向的GaN p-n结纳米线进行电流（EBIC）测量。 I-V特性揭示，欧姆和空间电荷的限制发生在GaN中p-n结的电流NW（SCLC）制度。由于采用了改进的接触过程中，既由p-n结和在氮化镓NW的p部分SCLC感应的电场中公开，并在不同的偏压由EBIC信号划定了。判断下0V和反向偏压在p-n结附近EBIC型材，我们推导的一个耗尽层宽度在116-125纳米的范围内。以下我们以前的工作中，受体的N-掺杂水平，估计是在2-3厘米×10（17）（-3）在厘米假设的2-3×10（18）的供体水平的N d（-3）。在n型GaN的空穴扩散长度被确定为用于NW＃1 75 nm和NW＃2 43纳米，这表明在n型GaN NW的m面小面低的表面重组速率。在正向偏压下，EBIC成像可视化由SCLC接近p侧接触，在协议不寻常SCLC先前的GaN纳米线报道感应的电场。

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