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首页> 外文期刊>Nanotechnology >A facile approach for reducing the working voltage of Au/TiO2/Au nanostructured memristors by enhancing the local electric field
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A facile approach for reducing the working voltage of Au/TiO2/Au nanostructured memristors by enhancing the local electric field

机译：通过增强局部电场来降低Au / TiO2 / Au纳米结构丢失件的工作电压的容易方法

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Memristor devices have attracted tremendous interest due to different applications ranging from nonvolatile data storage to neuromorphic computing units. Exploring the role of surface roughness of the bottom electrode (BE)/active layer interface provides useful guidelines for the optimization of the memristor switching performance. This study focuses on the effect of surface roughness of the BE electrode on the switching characteristics of Au/TiO2/Au three-layer memristor devices. An optimized wet-etching treatment condition was found to modify the surface roughness of the Au BE where the measurement results indicate that the roughness of the Au BE is affected by both duration time and solution concentrations of the wet-etching process. Then we fabricated arrays of TiO2-based nanostructured memristors sandwiched between two sets of cross-bar Au electrode lines (junction area 900 mu m(2)). The results revealed a reduction in the working voltages in current-voltage characteristic of the device performance when increasing the surface roughness at the Au(BE)/TiO2 active layer interface. The set voltage of the device (V-set) significantly decreased from 2.26-1.93 V when we increased the interface roughness from 4.2-13.1 nm. The present work provides information for better understanding the switching mechanism of titanium-dioxide-based devices, and it can be inferred that enhancing the roughness of the Au BE/TiO2 active layer interface leads to a localized non-uniform electric field distribution that plays a vital role in reducing the energy consumption of the device.
机译：由于不同的应用范围从非易失性数据存储到神经形态计算单元的不同，忆阻器设备引起了巨大的兴趣。探索底部电极（BE）/有源层接口的表面粗糙度的作用提供了用于优化Memitristor开关性能的有用指导。该研究侧重于在Au / TiO2 / Au三层函数器件的表面粗糙度对表面粗糙度的影响。发现优化的湿法蚀刻处理条件改变Au的表面粗糙度，其中测量结果表明Au的粗糙度受到湿蚀刻过程的持续时间和溶液浓度的影响。然后我们制造了夹在两组交叉条AU电极线（接线区域900μm（2））之间夹在两组的基于TiO2的纳米结构留片阵列。结果表明，当增加Au（是）/ TiO2有源层界面处的表面粗糙度时，器件性能的电流 - 电压特性的工作电压降低。当我们从4.2-13.1nm增加界面粗糙度时，器件（V-SET）的设定电压显着降低了2.26-1.93V。本工作提供了更好地理解基于钛 - 二氧化钛的装置的切换机制的信息，并且可以推断，增强Au / TiO2有源层界面的粗糙度导致播放的局部非均匀电场分布在降低设备的能量消耗方面的重要作用。

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