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The ambipolar evolution of a high-erformance WSe2 transistor assisted by a ferroelectric polymer

机译：铁电聚合物辅助高性能WSE2晶体管的Ambipolar演变

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摘要

In recent years, the electrical characteristics of WSe2 field-effect transistors (FETs) have been widely investigated with various dielectrics. Among them, being able to perfectly tune the polarity of WSe2 is meaningful and promising work. In this work, we systematically study the electrical properties of bilayer WSe2 FETs modulated by ferroelectric polymer poly (vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)). Compared to traditional gate dielectric SiO2, the P(VDF-TrFE) can not only tune both electron and hole concentrations to the same high level, but also improve the hole mobility of bilayer WSe2 to 265.96 cm(2) V-1 s(-1) under SiO2 gating. Its drain current on/off ratio is also improved to 2 x 10(5) for p-type and 4 x 10(5) for n-type driven by P(VDF-TrFE). More importantly, the ambipolar behaviors of bilayer WSe2 are effectively achieved and maintained because of the remnant polarization field of P(VDF-TrFE). This work indicates that WSe2 FETs with P(VDF-TrFE) gating have huge potential for complementary logic transistor applications, and paves an effective way to achieve in-plane p-n junctions.
机译：近年来，WSE2场效应晶体管（FET）的电特性已被广泛研究各种电介质。其中，能够完全调整WSE2的极性是有意义和有前途的工作。在这项工作中，我们系统地研究了铁电聚合物聚（偏二氟化酰基 - 三氟乙烯）调制的双层WSE2 FET的电性能（P（VDF-TRFE））。与传统的栅极介电SiO2相比，P（VDF-TRFE）不仅可以将电子和空穴浓度调节到相同的高水平，还可以改善双层WSE2至265.96cm（2）V-1 S的空穴迁移率（ - 1）在SiO2门控下。其漏极电流ON / OFF比对于P型和4×10（5）的用于由P（VDF-TRFE）驱动的N型的2×10（5）。更重要的是，由于P（VDF-TRFE）的残余偏振场，有效地实现和维持双层WSE2的Ampolar行为。这项工作表明，具有P（VDF-TRFE）门控的WSE2 FET具有互补逻辑晶体管应用的巨大潜力，并铺平了实现面内P-N结的有效方法。

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  • 来源
    《Nanotechnology》 |2018年第10期|共10页
  • 作者

    Li Dan; Wang Xudong; Chen Yan; Zhu Sixin; Gong Fan; Wu Guangjian; Meng Caimin; Liu Lan; Wang Lin; Lin Tie; Sun Shuo; Shen Hong; Wang Xingjun; Hu Weida; Wang Jianlu; Sun Jinglan; Meng Xiangjian; Chu Junhao;

  • 作者单位

    Shanghai Univ Sch Mat Sci &

    Engn 99 Shangda Rd Shanghai 200444 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys Natl Lab Infrared Phys 500 Yu Tian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys Natl Lab Infrared Phys 500 Yu Tian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys Natl Lab Infrared Phys 500 Yu Tian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys Natl Lab Infrared Phys 500 Yu Tian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys Natl Lab Infrared Phys 500 Yu Tian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys Natl Lab Infrared Phys 500 Yu Tian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys Natl Lab Infrared Phys 500 Yu Tian Rd Shanghai 200083 Peoples R China;

    Shanghai Univ Sch Mat Sci &

    Engn 99 Shangda Rd Shanghai 200444 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys Natl Lab Infrared Phys 500 Yu Tian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys Natl Lab Infrared Phys 500 Yu Tian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys Natl Lab Infrared Phys 500 Yu Tian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys Natl Lab Infrared Phys 500 Yu Tian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys Natl Lab Infrared Phys 500 Yu Tian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys Natl Lab Infrared Phys 500 Yu Tian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys Natl Lab Infrared Phys 500 Yu Tian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys Natl Lab Infrared Phys 500 Yu Tian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys Natl Lab Infrared Phys 500 Yu Tian Rd Shanghai 200083 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    WSe2; P(VDF-TrFE); ambipolar;

    机译：WSE2;P（VDF-TRFE）;Ambipolar;

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